Quantum dots (QDs) are zero-dimensional nanostructures that confined carriers in three dimensions comparable to their de Broglie wavelengths. Therefore, carriers exhibit?-shaped energy levels and densities of states. Due to their band structure, QD systems show significant advantages as active regions in laser cavities, both in term of lower threshold current densities and better thermal behaviour. The most studied system being InAs/GaAs system but the antimonide-based (Sb-based) material system has been paid much attention due to their potential for optical devices in the 3-5?m (0.25-0.40 eV) spectral regions and motivated by feasibility of active medium in high speed electronic and long wavelength photonic devices. In most cases, QDs structures had been obtained with an intrinsic elastic strain field arising from the lattice mismatch between the matrix and QD materials. The strain field plays a very significant role in the fabrication of the self-assembled QDs (SAQDs). Strain fields inside SAQD structures strongly affect the electronic band structure, which in turn, strongly affects the performance of optoelectronic devices. Therefore, knowledge and determination of the strain field in the dots and surrounding matrix is crucial in order to obtain a well ordered SAQDs structure. While knowledge and determination of the electronic structure calculation are necessary for further device modelling to improve the performance of the devices. Numerical work based on continuum-elasticity based on Finite Element Method (FEM) and standard-deformation-potential theory has been carried out to investigate the effect of strain on the band structure for InSb-based SAQD systems with type-I and type-II band alignment. The effect of elastic anisotropy on both strain distribution and band edges profile is also performed. Next, multi-band k?p method is used to model the electronic structure of InSb-based SAQD systems. The results from the modelling show that the strain-modified band profile of the zinc-blende III-V compound semiconductor SAQDs is not very sensitive to the details of the dot shape and the major governing parameter of the geometry is the aspect ratio of the dot. The modelling results also reveal that there are no appropriate material combinations for zinc-blende III-V compound semiconductors that would applicable for the MIR 3-5?m (0.25-0.40 eV) emission range when type-I band alignment is possible. This leads to the investigation of type-II broken gap InAsxSb(1-x)/InAs SAQDs. Finally, the optical properties of the InSb-based SAQDs are investigated by means of the photoluminescence (PL) measurement using Fourier transform infrared (FT-IR) spectroscopy. The PL results are analysed and compared to the modelling results.

In this dissertation, we use different optical and imaging spectroscopy techniques to study electronic structure and optical properties of CdTe/ZnTe and CdSe/ZnSe self-assembled quantum dots (SAQDs). We perform single dot photoluminescence excitation experiments to identify carrier excitation mechanisms in CdTe/ZnTe QDs. The first mechanism is direct excitation into the QD excited states followed by relaxation to the ground state and the second mechanism is direct excitation into the QD ground states through LO phonon-assisted absorption. We then execute resonant PL measurements for both CdTe and CdSe QD ensembles to study the dependence of exciton-LO phonon coupling on QD size in these II-VI SAQDs. We shown that the strength of exciton-LO phonon coupling increases significantly for QDs with lateral sizes smaller than the exciton Bohr radius (e.g. as-grown CdTe QDs) while for larger QDs (e.g. CdSe or CdTe annealed) it is almost independent of the QD emission energy, and therefore presumably of the QD size. In order to study electronic coupling between SAQDs, we setup imaging experiments with the use of a hemisphere solid immersion lens. While the PLE imaging measurements show the existence two-dimensional platelets with a typical size of about 500 nm which provide spatially extended but strong localized states through which different QDs could be populated simultaneously, the spatially resolved imaging data demonstrates a complete 2D map of those platelets. These results are further supported by computational calculations based on finite element analysis. Low temperature exciton spin relaxation in symmetric CdTe SAQDs has been thoroughly studied by means of cw polarized magneto-PL and polarized time-resolved PL spectroscopies. We find that the degeneracy of exciton energy levels has a strong influence on the spin transition. When the exciton spin states in QDs are degenerate, the spin relaxation time is much shorter than the exciton recombination time. In contrast, if this degeneracy is removed, either by asymmetry or an external magnetic field, the spin relaxation time becomes much longer than the exciton recombination time. Using simple rate equation models, we estimate exciton spin relaxation times equal to 4.8 ns and 50 ps for non-degenerate and degenerate QD states, respectively.

In this book, leading experts on quantum dot theory and technology provide comprehensive reviews of all aspects of quantum dot systems. The following topics are covered: (1) energy states in quantum dots, including the effects of strain and many-body effects; (2) self-assembly and self-ordering of quantum dots in semiconductor systems; (3) growth, structures, and optical properties of III-nitride quantum dots; (4) quantum dot lasers.

This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.