The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.

Captures the most up-to-date research in the field, written in an accessible style by the world's leading experts.

Advances in epitaxial growth and nanofabrication technology in the past several years have made it possible to engineer sophisticated semiconductor quantum devices with unprecedented control of their electronic and optical properties. A particularly important class of such devices is based on intersubband transitions, i.e. optical transitions between quantized electronic states in semiconductor heterostructures. Most notably, mid-infrared quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers nowadays offer superior performance for applications such as thermal imaging, spectroscopy, and biochemical sensing, and have recently become commercially available. Intersubband devices also have the potential for a revolutionary impact in the fields of silicon photonics, terahertz sensing, and ultra-high-bandwidth fiber-optic communications, and extensive research is ongoing to fulfill this promise. Joined by an international group of world experts, Paiella describes the basic device physics and applications of intersubband transitions, as well as the more recent and important developments in this exciting area of semiconductor nanotechnology.

The optical properties of semiconductors have played an important role since the identification of semiconductors as "small" bandgap materials in the thinies, due both to their fundamental interest as a class of solids baving specific optical propenies and to their many important applications. On the former aspect we can cite the fundamental edge absorption and its assignment to direct or indirect transitions, many-body effects as revealed by exciton formation and photoconductivity. On the latter aspect, large-scale applications sucb as LEDs and lasers, photovoltaic converters, photodetectors, electro-optics and non-linear optic devices, come to mind. The eighties saw a revitalization of the whole field due to the advent of heterostructures of lower-dimensionality, mainly two-dimensional quantum wells, which through their enhanced photon-matter interaction yielded new devices with unsurpassed performance. Although many of the basic phenomena were evidenced through the seventies, it was this impact on applications which in turn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamental physics.

The state-of-the-art of quantum transport and quantum kinetics in semiconductors, plus the latest applications, are covered in this monograph. Since the publishing of the first edition in 1996, the nonequilibrium Green function technique has been applied to a large number of new research topics, and the revised edition introduces the reader to many of these areas. This book is both a reference work for researchers and a self-tutorial for graduate students.

Intended for beginning graduate students, this text takes the reader from the familiar coordinate representation of quantum mechanics to the modern algebraic approach, emphasizing symmetry principles throughout. After an introduction to the basic postulates and techniques, the book discusses time-independent perturbation theory, angular momentum, identical particles, scatteering theory, and time-dependent perturbation theory. The whole is rounded off with several lectures on relativistic quantum mechanics and on many-body theory.

Graphene demonstrates interesting electrical, optical, and optoelectronic properties. A number of other one-atom-thick material structures have been discovered and studied. Industrially applicable technologies for these structures are currently under active development. In spite of enormous research in the area of devices based on graphene, the number of extensive review publications on THz devices based on graphene is small. This review volume would fill the gap. Researchers and engineers working in the fields of electronics and plasmonics can use it to understand the influence of plasmonics on device performance. The book can be also be used as a required text for doctorate courses and as a supplementary material for postgraduate courses. The material presented in the book is reviewed in detail in Chapter 1. Chapter 2 discusses the electronic and plasmonic properties of graphene and heterostructures based on graphene for all devices. Chapters 3–7 focus on the concepts of detectors and emitters with a special emphasis on plasmonic enhancement of those devices as well as on population inversion and lasing.