First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

The cutting edge of scientific reporting . . . PROGRESS in Inorganic Chemistry Nowhere is creative scientific talent busier than in the world ofinorganic chemistry experimentation. Progress in InorganicChemistry continues in its tradition of being the most respectedavenue for exchanging innovative research. This series providesinorganic chemists and materials scientists with a forum forcritical, authoritative evaluations of advances in every area ofthe discipline. With contributions from internationally renownedchemists, this latest volume offers an in-depth, far-rangingexamination of the changing face of the field, providing atantalizing glimpse of the emerging state of the science. "This series is distinguished not only by its scope and breadth,but also by the depth and quality of the reviews." -Journal of the American Chemical Society "[This series] has won a deservedly honored place on the bookshelfof the chemist attempting to keep afloat in the torrent of originalpapers on inorganic chemistry." -Chemistry in Britain CONTENTS OF VOLUME 54 * Atomlike Building Units of Adjustable Character: Solid-State andSolution Routes to Manipulating Hexanuclear Transition MetalChalcohalide Clusters (Eric J. Welch and Jeffrey R. Long) * Doped Semiconductor Nanocrystals: Synthesis, Characterization,Physical Properties, and Applications (J. Daniel Bryan and DanielR. Gamelin) * Stereochemical Aspects of Metal Xanthane Complexes: MolecularStructures and Supramolecular Self-Assembly (Edward R. T. Tiekinkand Ionel Haiduc) * Trivalent Uranium: A Versatile Species for Molecular Activation(Ilia Korobkov and Sandro Gambarotta) * Comparison of the Chemical Biology of NO and HNO: An InorganicPerspective (Katrina M. Miranda and David A. Wink) * Alterations of Nucleobase pKa Values upon Metal Coordination:Origins and Consequences (Bernhard Lippert) * Functionalization of Myoglobin (Yoshihito Watanabe and TakashiHayashi)

A thorough introduction to fundamental principles andapplications From its beginnings in metallurgy and ceramics, materials sciencenow encompasses such high- tech fields as microelectronics,polymers, biomaterials, and nanotechnology. Electronic MaterialsScience presents the fundamentals of the subject in a detailedfashion for a multidisciplinary audience. Offering a higher-leveltreatment than an undergraduate textbook provides, this textbenefits students and practitioners not only in electronics andoptical materials science, but also in additional cutting-edgefields like polymers and biomaterials. Readers with a basic understanding of physical chemistry or physicswill appreciate the text's sophisticated presentation of today'smaterials science. Instructive derivations of important formulae,usually omitted in an introductory text, are included here. Thisfeature offers a useful glimpse into the foundations of how thediscipline understands such topics as defects, phase equilibria,and mechanical properties. Additionally, concepts such asreciprocal space, electron energy band theory, and thermodynamicsenter the discussion earlier and in a more robust fashion than inother texts. Electronic Materials Science also features: * An orientation towards industry and academia drawn from theauthor's experience in both arenas * Information on applications in semiconductors, optoelectronics,photocells, and nanoelectronics * Problem sets and important references throughout * Flexibility for various pedagogical needs Treating the subject with more depth than any other introductorytext, Electronic Materials Science prepares graduate andupper-level undergraduate students for advanced topics in thediscipline and gives scientists in associated disciplines a clearreview of the field and its leading technologies.