This book provides a comprehensive introduction to the physics of the photovoltaic cell. It is suitable for undergraduates, graduate students, and researchers new to the field. It covers: basic physics of semiconductors in photovoltaic devices; physical models of solar cell operation; characteristics and design of common types of solar cell; and approaches to increasing solar cell efficiency. The text explains the terms and concepts of solar cell device physics and shows the reader how to formulate and solve relevant physical problems. Exercises and worked solutions are included.

Optoelectronics - Advanced Device Structures (Book IV) is following the Optoelectronics (Books I, II, and III) published in 2011, 2013, and 2015, as part of the InTech collection of international works on optoelectronics. Accordingly, as with the first three books of the collection, this book covers recent achievements by specialists around the world. The growing number of countries participating in this endeavor as well as joint participation of the US and Moldova scientists in edition of this book testifies to the unifying effect of science. An interested reader will find in the book the description of properties and applications employing organic and inorganic materials, as well as the methods of fabrication and analysis of operation and regions of application of modern optoelectronic devices.

"You, 0 Sun, are the eye of the world You are the soul of all embodied beings You are the source of all creatures You are the discipline of all engaged in work" - Translated from Mahabharata 3rd Century BC Today, energy is the lifeline and status symbol of "civilized" societies. All nations have therefore embarked upon Research and Development pro grams of varying magnitudes to explore and effectively utilize renewable sources of energy. Albeit a low-grade energy with large temporal and spatial variations, solar energy is abundant, cheap, clean, and renewable, and thus presents a very attractive alternative source. The direct conver sion of solar energy to electricity (photovoltaic effect) via devices called solar cells has already become an established frontier area of science and technology. Born out of necessity for remote area applications, the first commercially manufactured solar cells - single-crystal silicon and thin film CdS/Cu2S - were available well over 20 years ago. Indeed, all space vehicles today are powered by silicon solar cells. But large-scale terrestrial applications of solar cells still await major breakthroughs in terms of discovering new and radical concepts in solar cell device structures, utilizing relatively more abundant, cheap, and even exotic materials, and inventing simpler and less energy intensive fabrication processes. No doubt, this extraordinary challenge in R/D has led to a virtual explosion of activities in the field of photovoltaics in the last several years.

In this study Indium Tin Oxide (ITO) thin films were grown by both DC and RF magnetron sputtering techniques. To know deposition rate of ITO, system was calibrated for both DCMS and RFMS and then ITO were grown on glass substrate with the thickness of 70 nm and 40 nm by changing substrate temperature. The effect of substrate temperature, film thickness and sputtering method on structural, electrical and optical properties were investigated. The results show that substrate temperature and film thickness substantially affects the film properties, especially crystallization and resistivity. The thin films grown at the lower than 150 oC showed amorphous structure. However, crystallization was detected with the furtherincrease of substrate temperature. Band gap of ITO was calculated to be about 3.64eV at the substrate temperature of 150 oC, and itwidened with substrate temperature increment. From electrical measurements the resistivity at room temperature was obtained 1.28x10-4 and 1.29x10-4 D-cm, for DC and RF sputtered films, respectively. We also measured temperature dependence resistivity and the Hall coefficient of the films, and we calculated carrier concentration and Hall mobility."