Early Stages of Oxygen Precipitation in Silicon
Title | Early Stages of Oxygen Precipitation in Silicon PDF eBook |
Author | R. Jones |
Publisher | Springer Science & Business Media |
Pages | 535 |
Release | 2013-11-11 |
Genre | Science |
ISBN | 9400903553 |
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
Early Stages of Oxygen Precipitation in Silicon
Title | Early Stages of Oxygen Precipitation in Silicon PDF eBook |
Author | R. Jones |
Publisher | |
Pages | 552 |
Release | 2014-01-15 |
Genre | |
ISBN | 9789400903562 |
Effects of Oxygen Precipitation on Minority Carrier Lifetime in Silicon Crystals
Title | Effects of Oxygen Precipitation on Minority Carrier Lifetime in Silicon Crystals PDF eBook |
Author | PL. Fejes |
Publisher | |
Pages | 20 |
Release | 1983 |
Genre | Carrier lifetime |
ISBN |
Infrared (IR) absorption measurements of the interstitial oxygen concentration [O] for two-step annealed wafers, with reverse recovery time Trr and capacitance relaxation time Ts measurements on processed devices, have been used to investigate the influence of oxygen on the minority carrier lifetime (?) in a Czochralski-grown silicon crystal. Measurements of Trr and Ts show a strong dependence on the axial distribution of the initial interstitial oxygen concentration and on the concentration of precipitated oxygen. For a two-step anneal at 800°C and 1050°C for 16 h, the maximum average lifetimes of 4 μs and 180 μs are obtained from Trr and Ts respectively in wafers with an initial oxygen concentration [O]i ? 1.3 x 1018 cm-3, where oxygen precipitation is minimal. Minimum lifetime values of 0.31 ?s and 10 ?s for the same respective measurements are obtained for wafers with [O]i >= 1.8 x 1018 cm-3, where oxygen precipitation dominates. The experimental results indicate that oxygen precipitation is the dominant mechanism contributing to the degradation of minority carrier lifetime. The detection of an SiO2 phase in the infrared spectrum and the detection of precipitate platelets in these wafers subsequent to the two-step anneal provide additional supporting evidence of a direct relation between oxygen precipitation and minority carrier lifetime degradation.
Oxygen in Silicon
Title | Oxygen in Silicon PDF eBook |
Author | |
Publisher | Academic Press |
Pages | 711 |
Release | 1994-08-15 |
Genre | Technology & Engineering |
ISBN | 0080864392 |
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings
The Numerical Simulation of Oxygen Precipitation in Silicon
Title | The Numerical Simulation of Oxygen Precipitation in Silicon PDF eBook |
Author | Li Long |
Publisher | |
Pages | 106 |
Release | 2001 |
Genre | |
ISBN | 9783826593314 |
Quantitative Modeling of Oxygen Precipitation in Silicon
Title | Quantitative Modeling of Oxygen Precipitation in Silicon PDF eBook |
Author | Yi Yang |
Publisher | |
Pages | 0 |
Release | 2017 |
Genre | |
ISBN |
The vast majority of modern microelectronic devices are fabricated on single-crystal silicon wafers, which are produced predominantly by the Czochralski (CZ) melt-growth process. Important metrics that ultimately influence the quality of the silicon wafers include the concentration of impurities and the distribution of lattice defects (collectively known as microdefects). This thesis provides a multiscale quantitative modeling framework for describing physics of microdefects formation in silicon crystals, with particular emphasis on oxide precipitates.Among the most prevalent microdefects found in silicon crystals are nanoscale voids and oxide precipitates. Oxide precipitates, in particular, are critically important because they provide gettering sites for highly detrimental metallic atoms introduced during wafer processing and also enhance the mechanical strength of large-diameter wafers during high-temperature annealing. On the other hand, like any other crystalline defect species, they are undesirable in the surface region of the wafer where microelectronic devices are fabricated. Although much progress has been made with regards to oxide precipitate prediction and optimization, it has been surprisingly difficult to generate a robust, quantitative model that can accurately predict the distribution and density of precipitates over a wide range of crystal growth and wafer annealing conditions.In the first part of this thesis, a process scale model for oxide precipitation is presented. The model combines continuum mass transport balances, continuum thermodynamic and mechanical principles, and information from detailed atomic-scale simulations to describe the complex physics of coupled vacancy aggregation and oxide precipitation in silicon crystals. Results for various processing situations are shown and comparisons are made to experimental data demonstrating the predictive capability of the model.In the second part of this thesis, atomistic simulations are performed to study the stress field and strain energy of oblate spheroidal precipitates in silicon crystals as a function of precipitate shape and size. Although the stress field of a precipitate in silicon crystals may be studied within a continuum mechanics framework, atomic scale modeling does not require the idealized mechanical properties (and precipitate shapes) assumed in continuum models and therefore provides additional valuable insight. The atomistic simulations are based on a Tersoff empirical potential framework for silicon, germanium and oxygen. Stress distributions and stress energies are computed for coherent germanium precipitates and for incoherent, amorphous silicon dioxide precipitates in a crystalline silicon matrix. The impacts of precipitate size and shape are considered in detail, and for the case of oxide precipitates, special emphasis is placed on the role of interfacial relaxation. Whenever possible, the atomistic simulation results are compared with analytical solutions.
Properties of Crystalline Silicon
Title | Properties of Crystalline Silicon PDF eBook |
Author | Robert Hull |
Publisher | IET |
Pages | 1054 |
Release | 1999 |
Genre | Electronic books |
ISBN | 9780852969335 |
A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.