The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

This volume presents results from a Materials Research Society symposium aimed at one of the most important, yet often overlooked, areas in modern III-V device technology, namely the cause and effects of device degradation. Invited papers were presented on reliability calculations and protocols, the effects of various defects on device performance and the stability of layered structures and metallization. This topic is still one in which individual companies are reluctant to share their hard-earned data on reliability and degradation mechanisms, since these constitute a commercial advantage in many cases. It is clearly an area to which too little attention has been paid to date at international forums and it is expected that this will delineate the critical features of device and material degradation. Of continuing interest are the effects of stress and recombination-enhancement on the degradation of electronic and photonic devices, the role of defects in enhancing diffusion of dopants and lattice constituents and the reliability of metals on III-V materials. All of these subjects were covered in individual sessions within the symposium.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.