Special topic volume with invited peer reviewed papers only.

This volume of proceedings includes new and original scientific results along with recent developments in instrumentation and methods, in invited and contributed papers. Researchers and graduate students interested in hyperfine interaction detected by nuclear radiation as well as nuclear quadrupole interactions detected by resonance methods in the areas of materials, biological and medical science will find this volume indispensable.

This proceedings is a result of the conference held in honor of Professor Raymond K Sheline for his major contributions to our understanding of the properties of both nuclei and molecules and in celebration of his 70th birthday. The proceedings contains up-to-date treatments of forefront nuclear and molecular topics such as a determination of the mass of the neutrino, the unusual properties exhibited by nuclei under the stress of very rapid rotation, the structure of very loosely bound quantum systems, and the molecular mechanism of the solar to electric conversion.

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Thanks to the progress made in instruments and techniques, the methods in physical chemistry have developed rapidly over the past few decades, making them increasingly valuable for scientists of many disciplines. These two must-have volumes meet the needs of the scientific community for a thorough overview of all the important methods currently used. As such, this work bridges the gap between standard textbooks and review articles, covering a large number of methods, as well as the motivation behind their use. A uniform approach is adopted throughout both volumes, while the critical comparison of the advantages and disadvantages of each method makes this a valuable reference for physical chemists and other scientists working with these techniques.

The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.

GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.