Positron Annihilation in Semiconductors

Positron Annihilation in Semiconductors
Title Positron Annihilation in Semiconductors PDF eBook
Author Reinhard Krause-Rehberg
Publisher Springer Science & Business Media
Pages 408
Release 1999
Genre Science
ISBN 9783540643715

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This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

III-Nitride Semiconductors

III-Nitride Semiconductors
Title III-Nitride Semiconductors PDF eBook
Author M.O. Manasreh
Publisher Elsevier
Pages 463
Release 2000-12-06
Genre Science
ISBN 0080534449

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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Energy Research Abstracts

Energy Research Abstracts
Title Energy Research Abstracts PDF eBook
Author
Publisher
Pages 526
Release 1994-04
Genre Power resources
ISBN

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Nonlinear Optics in Semiconductors II

Nonlinear Optics in Semiconductors II
Title Nonlinear Optics in Semiconductors II PDF eBook
Author
Publisher Academic Press
Pages 351
Release 1998-11-09
Genre Science
ISBN 0080864570

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Grants and Awards for the Fiscal Year Ended ...

Grants and Awards for the Fiscal Year Ended ...
Title Grants and Awards for the Fiscal Year Ended ... PDF eBook
Author National Science Foundation (U.S.)
Publisher
Pages 260
Release 1980
Genre Federal aid to research
ISBN

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Physics Briefs

Physics Briefs
Title Physics Briefs PDF eBook
Author
Publisher
Pages 916
Release 1994
Genre Physics
ISBN

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Nuclear Methods in Semiconductor Physics

Nuclear Methods in Semiconductor Physics
Title Nuclear Methods in Semiconductor Physics PDF eBook
Author G. Langouche
Publisher Elsevier
Pages 270
Release 1992-04-01
Genre Science
ISBN 044459681X

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The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.