Nowadays, CMOS technologies account for almost 90% of all integrated circuits (ICs). This book provides an essential introduction to CMOS ICs. The contents of this book are based upon a previous publication, entitled 'MOS Ics', which was published in Dutch and English by Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively. This book contains state-of-the-art material, but also focuses on aspects of scaling up to and beyond 0.1 mm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into various aspects of design, implementation and application. In contrast to other works on this topic, the book explores all associated disciplines of deep-submicron CMOS ICs, including physics, design, technology and packaging, low-power design and signal integrity. The text is based upon in-house Philips courseware, which, to date, has been completed by more than 1500 engineers. Carefully structured and enriched by hundreds of figures, photograhs and in-depth exercises, the book is well-suited for the purpose of self-study. This second edition contains some corrections and is completely updated with respect to the previous one. In the one-and-a-half years of its existance, the first edition has already been used in more than ten in-house courses. Several typing errors and the like, which showed up during these courses, have been corrected. Moreover, most of the chapters have been updated with state-of-the-art material. Numbers that describe trends and roadmaps have been updated as well, to let the contents of this book be valuable for at least another five years.

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

CMOS technologies account for almost 90% of all integrated circuits (ICs). This book provides an essential introduction to nanometer CMOS ICs. The contents of this book are based upon several previous publications and editions entitled 'MOS ICs' and 'Deep-Submicron CMOS ICs'. Nanometer CMOS ICs is fully updated and is not just a copy-and-paste of previous material. It includes aspects of scaling up to and beyond 32nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. In contrast to other works on this topic, the book explores all associated disciplines of nanometer CMOS ICs, including physics, design, technology, yield, packaging, less-power design, variability, reliability and signal integrity. Finally it also includes extensive discussions on the trends and challenges for further scaling. The text is based upon in-house Philips and NXP Semiconductors courseware, which, to date, has been completed by more than 3000 engineers working in a large variety of related disciplines: architecture, design, test, process, packaging, failure analysis and software. Carefully structured and enriched by in-depth exercises, hundreds of colour figures and photographs and many references, the book is well-suited for the purpose of self-study.

Nowadays, CMOS technologies account for almost 90% of all integrated circuits (ICs). This book provides an essential introduction to CMOS ICs. The contents of this book are based upon a previous publication, entitled MOS ICs, which was published in Dutch and English by Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively. This book contains state-of-the-art material, but also focuses on aspects of scaling up to and beyond 0.1 mm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into various aspects of design, implementation and application. In contrast to other works on this topic, the book explores all associated disciplines of deep-submicron CMOS ICs, including physics, design, technology and packaging, low-power design and signal integrity. The text is based upon in-house Philips courseware, which, to date, has been completed by more than 1500 engineers. Carefully structured and enriched by hundreds of figures, photographs and in-depth exercises, the book is well-suited for the purpose of self-study.

One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.

This book provides an in-depth overview of design and implementation of leakage reduction techniques. The focus is on applicability, technology dependencies, and scalability. The book mainly deals with circuit design but also addresses the interface between circuit and system level design on the one side and between circuit and physical design on the other side.