High bandwidth sensors are required to measure the wide-bandgap devices’ transient behavior because of their very fast switching speed. In addition to high bandwidth, the current sensor must introduce little disturbance to the switching power loop. Specifically, excessive parasitic inductance introduced by the current sensor drastically changes the switching behavior, making the measurement result invalid. Conventional high bandwidth current sensors are first reviewed to understand their limitations. By combining the structure of coaxial shunt resistor and alumina substrate of surface mount thin film resistors, a novel current sensor surface mount coaxial shunt resistor (SMDCSR) is introduced. Its performance is then modeled and experimentally characterized. Experimental testing verifies its capability of achieving very high bandwidth of up to 2 GHz while introducing little parasitic inductance of less than 0.2 nH. Compared with state-of-the-art commercial products, SMDCSR achieves more than 10x higher bandwidth and less than 1/10 insertion inductance. SMDCSRs are thus ideal for current measurement where high bandwidth and low electrical footprint are required, especially for wide-bandgap devices’ dynamic characterization.

Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.