1 The content ofthis article is based on a German book version ) which appeared at the end of the year 1986. The author tried to incorporate - as far as possible - new important results published in the last year. But the literature in the field of "convection and inhomogeneities in crystal growth from the melt" has increased so much in the meantime that the reader and the collegues should make allowance for any incompleteness, also in the case that their important contributions have not been cited. This could for example hold for problems related to the Czochralski growth. But especially for this topic the reader may be refered to the forthcoming volume of this series, which contains special contributions on "Surface Tension Driven Flow in Crystal Growth Melts" by D. Schwabe and on "Convection in Czochralski Melts" by M. Mihelcic, W. Uelhoff, H. Wenzl and K. Wingerath. The preparation of this manuscript has been supported by several women whose help is gratefully acknowledged by the autor: Mrs. Gisela Neuner for the type writing, Mrs. Abigail Sanders, Mrs. Fiona Eels and especially Prof. Nancy Haegel for their help in questions of the English language and Mrs. Christa Weber for reading corrections. Also the good cooperation with the Springer Verlag, especially Mrs. Bohlen and with the managing editor of Crystals, Prof. H. C. Freyhardt, who critically read the manuscript, is acknowledged.

Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) and III (Thin Film Growth and Epitaxy). Volume IA highlights thermodynamics and kinetics. After historical introduction of the crystal growth, phase equilibria, defect thermodynamics, stoichiometry, and shape of crystal and structure of melt are described. Then, the most fundamental and basic aspects of crystal growth are presented, along with the theories of nucleation and growth kinetics. In addition, the simulations of crystal growth by Monte Carlo, ab initio-based approach and colloidal assembly are thoroughly investigated. Volume IBHandbook of Crystal Growth, 2nd Edition (Fundamentals: Transport and Stability) Volume IB discusses pattern formation, a typical problem in crystal growth. In addition, an introduction to morphological stability is given and the phase-field model is explained with comparison to experiments. The field of nanocrystal growth is rapidly expanding and here the growth from vapor is presented as an example. For the advancement of life science, the crystal growth of protein and other biological molecules is indispensable and biological crystallization in nature gives many hints for their crystal growth. Another subject discussed is pharmaceutical crystal growth. To understand the crystal growth, in situ observation is extremely powerful. The observation techniques are demonstrated. Volume IA - Explores phase equilibria, defect thermodynamics of Si, stoichiometry of oxides and atomistic structure of melt and alloys - Explains basic ideas to understand crystal growth, equilibrium shape of crystal, rough-smooth transition of step and surface, nucleation and growth mechanisms - Focuses on simulation of crystal growth by classical Monte Carlo, ab-initio based quantum mechanical approach, kinetic Monte Carlo and phase field model. Controlled colloidal assembly is presented as an experimental model for crystal growth. Volume IIB - Describes morphological stability theory and phase-field model and comparison to experiments of dendritic growth - Presents nanocrystal growth in vapor as well as protein crystal growth and biological crystallization - Interprets mass production of pharmaceutical crystals to be understood as ordinary crystal growth and explains crystallization of chiral molecules - Demonstrates in situ observation of crystal growth in vapor, solution and melt on the ground and in space

Crystal pulling is an industrial process and provides the bulk of semiconductor crystals for the semiconductor industry. Initially a purely empirical process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attempt to strengthen the interface between the practical crystal grower and the applied mathematician involved in analytical and computer modelling. Its focus is on the physics, chemistry and metallurgy of the process. From reviews: "... There is a need for a modern, non-trivial text on Czochralski growth ... and Dr. Hurle is eminently suited to write such a text."; "Dr. Hurle is probably uniquely qualified to write a book on ... (the Czochralski) growth process. ... He has published a great deal of very substantial as well as innovative work in this area."

Crystal Growth, Second Edition deals with crystal growth methods and the relationships between them. The chemical physics of crystal growth is discussed, along with solid growth techniques such as annealing, sintering, and hot pressing; melt growth techniques such as normal freezing, cooled seed method, crystal pulling, and zone melting; solution growth methods; and vapor phase growth. This book is comprised of 15 chapters and opens with a bibliography of books and source material, highlighted by a classification of crystal growth techniques. The following chapters focus on the molecular state of a crystal when in equilibrium with respect to growth or dissolution; the fundamentals of classical and modern hydrodynamics as applied to crystal growth processes; creation, control, and measurement of the environment in which a crystal with desired properties can grow; and growth processes where transport occurs through the vapor phase. The reader is also introduced to crystal growth with molecular beam epitaxy; crystal pulling as a crystal growth method; and zone refining and its applications. This monograph will be of interest to physicists and crystallographers.

This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

A unique text presenting practical information on the topic of nucleation and crystal growth processes from metastable solutions and melts Nucleation and Crystal Growth is a groundbreaking text thatoffers an overview and description of the processes and phenomena associated with metastability of solutions and melts. The author—a noted expert in the field—puts the emphasis on low-temperature solutions that are typically involved in crystallization in a wide range of industries. The text begins with a review of the basic knowledge of solutions and the fundamentals of crystallization processes. The author then explores topics related to the metastable state of solutions and melts from the standpoint of three-dimensional nucleation and crystal growth. Nucleation and Crystal Growth is the first text that contains a unified description and discussion of the many processes and phenomena occurring in the metastable zone of solutions and melts from the consideration of basic concepts of structure of crystallization. This important text: Outlines an interdisciplinary approach to the topic and offers an essential guide for crystal growth practitioners in materials science, physics, and chemical engineering Contains a comprehensive content that details the crystallization processes starting from the initial solutions and melts, all the way through nucleation, to the final crystal products Presents a unique focus and is the first book on understanding, and exploiting, metastability of solutions and melts in crystallization processes Written for specialists and researchers in the fields of materials science, condensed matter physics, and chemical engineering. Nucleation and Crystal Growth is a practical resource filled with hands-on knowledge of nucleation and crystal growth processes from metastable solutions and melts.