This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

This extensive knowledge base provides a coherent description of advanced topics in materials science and engineering with an interdisciplinary/multidisciplinary approach. The book incorporates a historical account of critical developments and the evolution of materials fundamentals, providing an important perspective for materials innovations, including advances in processing, selection, characterization, and service life prediction. It includes the perspectives of materials chemistry, materials physics, engineering design, and biological materials as these relate to crystals, crystal defects, and natural and biological materials hierarchies, from the atomic and molecular to the macroscopic, and emphasizing natural and man-made composites. This expansive presentation of topics explores interrelationships among properties, processing, and synthesis (historic and contemporary). The book serves as both an authoritative reference and roadmap of advanced materials concepts for practitioners, graduate-level students, and faculty coming from a range of disciplines.

This book is one of a series of five volumes forming an integrated, self-study course on silicon device physics, modes of operation, characterization, and fabrication. The series is based on many years of the author’s experience in academic and industrial teaching of semiconductors. The books are suitable for both class-teaching and self-study. The authors have designed the content to enable readers to be introduced gradually to semiconductors, in particular silicon components. The presentation includes many illustrations, practical examples, review questions and problems at the end of each chapter. Answers to review questions and solutions to problems will be provided for “self-check”. Complements courses covering silicon device physics, mode of components, characterization, and fabrication; Enables comprehensive, self-study in semiconductors, aimed at practicing engineers or university students; Includes many illustrations, practical examples, review questions and problems at the end of each chapter.

Compatibility and Testing of Electronic Components outlines the concepts of component part life according to thresholds of failure; the advantages that result from identifying such thresholds; their identification; and the various tests used in their detection. The book covers topics such as the interconnection of miniature passive components; the integrated circuit compatibility and its components; the semiconductor joining techniques; and the thin film hybrid approach in integrated circuits. Also covered are topics such as thick film resistors, conductors, and insulators; thin inlays for electronic applications; and humidity corrosion of metallic resistors. The text is recommended for electrical engineers who would like to know more about electrical components, especially those who are interested in the fields of thin films and integrated circuitry.