Compound Semiconductor Materials and Devices

Compound Semiconductor Materials and Devices
Title Compound Semiconductor Materials and Devices PDF eBook
Author Zhaojun Liu
Publisher Springer Nature
Pages 65
Release 2022-06-01
Genre Technology & Engineering
ISBN 3031020286

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Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Novel Compound Semiconductor Nanowires

Novel Compound Semiconductor Nanowires
Title Novel Compound Semiconductor Nanowires PDF eBook
Author Fumitaro Ishikawa
Publisher CRC Press
Pages 420
Release 2017-10-17
Genre Science
ISBN 1315340720

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One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Handbook of Silicon Photonics

Handbook of Silicon Photonics
Title Handbook of Silicon Photonics PDF eBook
Author Laurent Vivien
Publisher Taylor & Francis
Pages 831
Release 2016-04-19
Genre Science
ISBN 1439836116

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The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,

Monolithic Integration of III-V Compound Semiconductor Devices in Silicon-based Electronics

Monolithic Integration of III-V Compound Semiconductor Devices in Silicon-based Electronics
Title Monolithic Integration of III-V Compound Semiconductor Devices in Silicon-based Electronics PDF eBook
Author Jong-Won Lee
Publisher
Pages 526
Release 1997
Genre Compound semicoductors
ISBN

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Investigates semiconductor materials that may facilitate epitaxial growth of laser devices on Si substrates. Presents solutions to the main problems in achieving monolithic integration: growth of low defect density III-V epilayers on Si [Silicon] and growth of light-emitting material on Si. GaP [Gallium Phosphide] can be grown only on off-axis Si, light-emitting GaInP [Gallium Indium Phosphide] island on on-axis, and using selective area growth, on-axis GaP surface on the epilayer can be recovered. Also demonstrates room temperature electroluminescence of GaInP islands.

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995
Title Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 PDF eBook
Author Institute of Physics Conference
Publisher CRC Press
Pages 1352
Release 2020-10-28
Genre Science
ISBN 1000157105

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Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices
Title SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices PDF eBook
Author D. Harame
Publisher The Electrochemical Society
Pages 1066
Release 2010-10
Genre Science
ISBN 1566778255

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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Germanium-Based Technologies

Germanium-Based Technologies
Title Germanium-Based Technologies PDF eBook
Author Cor Claeys
Publisher Elsevier
Pages 476
Release 2011-07-28
Genre Science
ISBN 008047490X

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Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications