Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Investigates semiconductor materials that may facilitate epitaxial growth of laser devices on Si substrates. Presents solutions to the main problems in achieving monolithic integration: growth of low defect density III-V epilayers on Si [Silicon] and growth of light-emitting material on Si. GaP [Gallium Phosphide] can be grown only on off-axis Si, light-emitting GaInP [Gallium Indium Phosphide] island on on-axis, and using selective area growth, on-axis GaP surface on the epilayer can be recovered. Also demonstrates room temperature electroluminescence of GaInP islands.

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: Basic Properties of Silicon Quantum Wells, Wires, Dots and Superlattices Absorption Processes in Semiconductors Light Emitters in Silicon Photodetectors , Photodiodes and Phototransistors Raman Lasers including Raman Scattering Guided Lightwaves Planar Waveguide Devices Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines the basic principles of operation of devices, the structures of the devices, and offers an insight into state-of-the-art and future developments.

Recently the world celebrated the 60th anniversary of the invention of the first transistor. The first integrated circuit (IC) was built a decade later, with the first microprocessor designed in the early 1970s. Today, ICs are a part of nearly every aspect of our daily lives. They help us live longer and more comfortably, and do more, faster. All this is possible because of the relentless search for new materials, circuit designs, and ideas happening on a daily basis at industrial and academic institutions around the globe. Showcasing the latest advances in very-large-scale integrated (VLSI) circuits, VLSI: Circuits for Emerging Applications provides a balanced view of industrial and academic developments beyond silicon and complementary metal–oxide–semiconductor (CMOS) technology. From quantum-dot cellular automata (QCA) to chips for cochlear implants, this must-have resource: Investigates the trend of combining multiple cores in a single chip to boost performance of the overall system Describes a novel approach to enable physically unclonable functions (PUFs) using intrinsic features of a VLSI chip Examines the VLSI implementations of major symmetric and asymmetric key cryptographic algorithms, hash functions, and digital signatures Discusses nonvolatile memories such as resistive random-access memory (Re-RAM), magneto-resistive RAM (MRAM), and floating-body RAM (FB-RAM) Explores organic transistors, soft errors, photonics, nanoelectromechanical (NEM) relays, reversible computation, bioinformatics, asynchronous logic, and more VLSI: Circuits for Emerging Applications presents cutting-edge research, design architectures, materials, and uses for VLSI circuits, offering valuable insight into the current state of the art of micro- and nanoelectronics.

The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,