Abstract: PhD Dissertation: MOCVD of WNx Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Chemical Vapor Deposition of Thin Films for Diffusion Barrier Applications" by Omar James Bchir, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.

This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.

As semiconductor device dimensions shrink, new diffusion barriers will be required. Amorphous refractory ternaries have been identified as promising barrier candidates; because sputtering may not be suitable, we have developed chemical vapor deposition processes for these materials. Acceptable deposition rates are found for each of these processes at 350 C, with all depositions performed between 300 and 450 C. The first process produces a range of Ti-Si-N compositions from Ti organometallic, SiH4, and NH3. Resistivity of the Ti-Si-N films changes with Si content from>1[Omega]-cm at 25 at.% Si down to that of TiN (200[mu][Omega]-cm). Step coverage obtained is better than 80% on 0.5 [mu]m features with aspect ratios of>1.6. The second CVD process produces a range of W-Si-N film compositions from WF6, Si2H6, and NH3. Resistivities vary with composition from 350 to 20,000 [mu][Omega]-cm. Step coverage obtained is 100% on reentrant 0.25 [mu]m features with aspect ratios of 4.0. The third process employs WF6(reduced by SiH4), B2H6, and NH3 to produce W-B-N films with a range of compositions. Resistivities range from 200 to 20,000 [mu][Omega]-cm. Step coverage obtained is H"0% on 1.5 [mu]m features with aspect ratios of 5.5.