Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.

This book describes the design, physics, and performance of high density plasma sources which have been extensively explored in low pressure plasma processing, such as plasma etching and planarization, plasma enhanced chemical vapor deposition of thin films, sputtered deposition of metals and dielectrics, epitaxial growth of silicon and GaAs, and many other applications. This is a comprehensive survey and a detailed description of most advanced high density plasma sources used in plasma processing. The book is a balanced presentation in that it gives both a theoretical treatment and practical applications. It should be of considerable interest to scientists and engineers working on plasma source design, and process development.

The development of plasma sources with densities and temperatures in the 1015-1017 cm−3 and 1-10eV ranges which are slowly varying over several hundreds of nanoseconds within several cubic centimeter volumes is of interest for applications such as intense electron beam focusing as part of the x-ray radiography program. In particular, theoretical work [1,2] suggests that replacing neutral gas in electron beam focusing cells with highly conductive, pre-ionized plasma increases the time-averaged e-beam intensity on target, resulting in brighter x-ray sources. This LDRD project was an attempt to generate such a plasma source from fine metal wires. A high voltage (20-60kV), high current (12-45kA) capacitive discharge was sent through a 100 [mu]m diameter aluminum wire forming a plasma. The plasma's expansion was measured in time and space using spectroscopic techniques. Lineshapes and intensities from various plasma species were used to determine electron and ion densities and temperatures. Electron densities from the mid-1015 to mid-1016 cm−3 were generated with corresponding electron temperatures of between 1 and 10eV. These parameters were measured at distances of up to 1.85 cm from the wire surface at times in excess of 1 [mu]s from the initial wire breakdown event. In addition, a hydrocarbon plasma from surface contaminants on the wire was also measured. Control of these contaminants by judicious choice of wire material, size, and/or surface coating allows for the ability to generate plasmas with similar density and temperature to those given above, but with lower atomic masses.