GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Highlighting the challenges RF and microwave circuit designers face in their day-to-day tasks, RF and Microwave Circuits, Measurements, and Modeling explores RF and microwave circuit designs in terms of performance and critical design specifications. The book discusses transmitters and receivers first in terms of functional circuit block and then examines each block individually. Separate articles consider fundamental amplifier issues, low noise amplifiers, power amplifiers for handset applications and high power, power amplifiers. Additional chapters cover other circuit functions including oscillators, mixers, modulators, phase locked loops, filters and multiplexers. New chapters discuss high-power PAs, bit error rate testing, and nonlinear modeling of heterojunction bipolar transistors, while other chapters feature new and updated material that reflects recent progress in such areas as high-volume testing, transmitters and receivers, and CAD tools. The unique behavior and requirements associated with RF and microwave systems establishes a need for unique and complex models and simulation tools. The required toolset for a microwave circuit designer includes unique device models, both 2D and 3D electromagnetic simulators, as well as frequency domain based small signal and large signal circuit and system simulators. This unique suite of tools requires a design procedure that is also distinctive. This book examines not only the distinct design tools of the microwave circuit designer, but also the design procedures that must be followed to use them effectively.

Design techniques for nonlinear microwave circuits are much less developed than for linear microwave circuits. Until now there has been no up-to-date text available in this area. Current titles in this field are considered outdated and tend to focus on analysis, failing to adequately address design and measurement aspects. Giannini and Leuzzi provide the theoretical background to non-linear microwave circuits before going on to discuss the practical design and measurement of non-linear circuits and components. Non-linear Microwave Circuit Design reviews all of the established analysis and characterisation techniques available and provides detailed coverage of key modelling methods. Practical examples are used throughout the text to emphasise the design and application focus of the book. Provides a unique, design-focused, coverage of non-linear microwave circuits Covers the fundamental properties of nonlinear circuits and methods for device modelling Outlines non-linear measurement techniques and characterisation of active devices Reviews available design methodologies for non-linear power amplifiers and details advanced software modelling tools Provides the first detailed treatment of non-linear frequency multipliers, mixers and oscillators Focuses on the application potential of non-linear components Practicing engineers and circuit designers working in microwave and communications engineering and designing new applications, as well as senior undergraduates, graduate students and researchers in microwave and communications engineering and their libraries will find this a highly rewarding read.

As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.