Characteristics, Optimization, and Integrated Circuit Applications of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
Title | Characteristics, Optimization, and Integrated Circuit Applications of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors PDF eBook |
Author | Bruce McRae Green |
Publisher | |
Pages | 406 |
Release | 2001 |
Genre | |
ISBN |
Analysis of the Equivalent Circuit Model of the AIGaN/GaN High Electron Mobility Transistor
Title | Analysis of the Equivalent Circuit Model of the AIGaN/GaN High Electron Mobility Transistor PDF eBook |
Author | Chia-Hsuan Tsai |
Publisher | |
Pages | 44 |
Release | 2006 |
Genre | |
ISBN |
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Title | Nitride Wide Bandgap Semiconductor Material and Electronic Devices PDF eBook |
Author | Yue Hao |
Publisher | CRC Press |
Pages | 389 |
Release | 2016-11-03 |
Genre | Computers |
ISBN | 149874513X |
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Chemical Abstracts
Title | Chemical Abstracts PDF eBook |
Author | |
Publisher | |
Pages | 2540 |
Release | 2002 |
Genre | Chemistry |
ISBN |
Dissertation Abstracts International
Title | Dissertation Abstracts International PDF eBook |
Author | |
Publisher | |
Pages | 794 |
Release | 2005 |
Genre | Dissertations, Academic |
ISBN |
American Doctoral Dissertations
Title | American Doctoral Dissertations PDF eBook |
Author | |
Publisher | |
Pages | 776 |
Release | 2001 |
Genre | Dissertation abstracts |
ISBN |
GaN Transistors for Efficient Power Conversion
Title | GaN Transistors for Efficient Power Conversion PDF eBook |
Author | Alex Lidow |
Publisher | John Wiley & Sons |
Pages | 518 |
Release | 2019-08-12 |
Genre | Science |
ISBN | 1119594421 |
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.