With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.

What Is Carbon Nanotube Field Effect Transistor A carbon nanotube field-effect transistor, also known as a CNTFET, is a kind of field-effect transistor that makes use of a single carbon nanotube or an array of carbon nanotubes as the channel material in place of bulk silicon, as is done in the conventional MOSFET construction. Since they were first exhibited in 1998, there have been significant advancements in CNTFET technology. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Carbon nanotube field-effect transistor Chapter 2: Carbon nanotube Chapter 3: JFET Chapter 4: Schottky barrier Chapter 5: Electron mobility Chapter 6: Nanoelectromechanical systems Chapter 7: Threshold voltage Chapter 8: Organic field-effect transistor Chapter 9: Ballistic conduction Chapter 10: Hybrid solar cell Chapter 11: Potential applications of carbon nanotubes Chapter 12: Carbon nanotubes in photovoltaics Chapter 13: Optical properties of carbon nanotubes Chapter 14: Carbon nanotube nanomotor Chapter 15: NanoIntegris Chapter 16: Ballistic conduction in single-walled carbon nanotubes Chapter 17: Tunnel field-effect transistor Chapter 18: Field-effect transistor Chapter 19: Carbon nanotubes in interconnects Chapter 20: Synthesis of carbon nanotubes Chapter 21: Vertically aligned carbon nanotube arrays (II) Answering the public top questions about carbon nanotube field effect transistor. (III) Real world examples for the usage of carbon nanotube field effect transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of carbon nanotube field effect transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of carbon nanotube field effect transistor.

This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.

This book describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behaviour with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach.

The discovery of fullerenes (also known as buckyballs) has generated tremendous excitement and opened up a new field of carbon chemistry. As the first book available on this topic, this volume will be a landmark reference in the field. Because buckyballs are essentially closed hollow cages made up of carbon atoms, they can be manipulated in a variety of ways to yield never-before-seen materials. The balls can, for instance, be doped with atoms or pulled out into tubules and filled with lead to provide properties of high-temperature superconductivity. Researchers can now create their own buckyballs in a process that is almost as simple as making soot, making this research as inexpensive as it is exotic (which has doubtless contributed to its popularity). Researchers anticipate that fullerenes will offer boundless opportunities in the development of new products, drugs and materials. Science of Fullerenes and Carbon Nanotubes introduces materials scientists, chemists, and solid state physicists to the field of fullerenes, and discusses the unique properties and applications. both current and future, of all classes of fullerenes. Key Features * First comprehensive resource on fullerenes and their applications * Provides an introduction to the topic * Presents an extensive discussion of current and future applications of Fullerenes * Covers all classes of fullerenes

The first introductory textbook to explain the properties and performance of practical nanotube devices and related applications.

The development and the dimensions of carbon nanotubes make the transistor a challenge to develop and to control the aspects of it, such as threshold voltage, maximum drain current, maximum transconductance. The investigated characteristics of CNTFETs represent its viability into transistor applications for NEMS switches, memory cells, field emission displays, biomedical instruments etc (Singh, 2005). Even with pessimistic assumptions,