Coupling the development of emerging experimental techniques in STEM and EELS with a fundamental understanding of atomic electronic structure afforded by DFT represents the unique approach and intention of this thesis. Scanning transmission electron microscopes equipped with high-angle annular dark field (HAADF) detectors and Gatan image filters (GIF) provide images and spectra, where the image brightness is interpreted as a function of atomic mass and thickness, and elemental specific spectra provide a means for the exploration of electronic and chemical structure of materials at the angstrom size scale. Over the past 20 years, the application of EELS in STEM has enabled more accurate elemental identification and exploration of electronic and chemical structure on angstrom-length scales, and arguably has provided an unprecedented wealth of materials characterization compared to other available techniques. Many materials issues related to specific novel properties that cannot be analyzed using the traditional techniques of the past, however, still remain unanswered. These concepts require a married approach of experiment and theory to fully explain. The intent of this dissertation is the development of improved analysis techniques that derive quantitative atomic scale information in connection with unraveling the origins of materials properties linked to the electronic structure and chemistry of materials.

Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. Through the technique of Z-contrast imaging, it is now possible to form atomic resolution images with high compositional sensitivity from which atomic column positions can be directly determined. An incoherent image of this nature also allows atomic resolution chemical analysis to be performed, by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. These powerful techniques, combined with atomic-scale calculations, constitute a powerful probe of the structural, kinetic and thermodynamic properties of complex materials. The authors show the direct observation of As segregated to specific sites in a Si grain boundary, and present a candidate model for the structure of the Si/SiO2 interface.

This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.

Scanning transmission electron microscopy has become a mainstream technique for imaging and analysis at atomic resolution and sensitivity, and the authors of this book are widely credited with bringing the field to its present popularity. Scanning Transmission Electron Microscopy(STEM): Imaging and Analysis will provide a comprehensive explanation of the theory and practice of STEM from introductory to advanced levels, covering the instrument, image formation and scattering theory, and definition and measurement of resolution for both imaging and analysis. The authors will present examples of the use of combined imaging and spectroscopy for solving materials problems in a variety of fields, including condensed matter physics, materials science, catalysis, biology, and nanoscience. Therefore this will be a comprehensive reference for those working in applied fields wishing to use the technique, for graduate students learning microscopy for the first time, and for specialists in other fields of microscopy.

The first comprehensive guide on Atomic-Scale Analytical Tomography, extending basics to the future implications for science and technology.

Materials Characterization Using Nondestructive Evaluation (NDE) Methods discusses NDT methods and how they are highly desirable for both long-term monitoring and short-term assessment of materials, providing crucial early warning that the fatigue life of a material has elapsed, thus helping to prevent service failures. Materials Characterization Using Nondestructive Evaluation (NDE) Methods gives an overview of established and new NDT techniques for the characterization of materials, with a focus on materials used in the automotive, aerospace, power plants, and infrastructure construction industries. Each chapter focuses on a different NDT technique and indicates the potential of the method by selected examples of applications. Methods covered include scanning and transmission electron microscopy, X-ray microtomography and diffraction, ultrasonic, electromagnetic, microwave, and hybrid techniques. The authors review both the determination of microstructure properties, including phase content and grain size, and the determination of mechanical properties, such as hardness, toughness, yield strength, texture, and residual stress. - Gives an overview of established and new NDT techniques, including scanning and transmission electron microscopy, X-ray microtomography and diffraction, ultrasonic, electromagnetic, microwave, and hybrid techniques - Reviews the determination of microstructural and mechanical properties - Focuses on materials used in the automotive, aerospace, power plants, and infrastructure construction industries - Serves as a highly desirable resource for both long-term monitoring and short-term assessment of materials