Learn about fundamental and advanced topics in etching with this practical guide Atomic Layer Processing: Semiconductor Dry Etching Technology delivers a hands-on, one-stop resource for understanding etching technologies and their applications. The distinguished scientist, executive, and author offers readers in-depth information on the various etching technologies used in the semiconductor industry, including thermal, isotropic atomic layer, radical, ion-assisted, and reactive ion etching. The book begins with a brief history of etching technology and the role it has played in the information technology revolution, along with a collection of commonly used terminology in the industry. It then moves on to discuss a variety of different etching techniques, before concluding with discussions of the fundamentals of etching reactor design and newly emerging topics in the field such as the role played by artificial intelligence in the technology. Atomic Layer Processing includes a wide variety of other topics as well, all of which contribute to the author's goal of providing the reader with an atomic-level understanding of dry etching technology sufficient to develop specific solutions for existing and emerging semiconductor technologies. Readers will benefit from: A complete discussion of the fundamentals of how to remove atoms from various surfaces An examination of emerging etching technologies, including laser and electron beam assisted etching A treatment of process control in etching technology and the role played by artificial intelligence Analyses of a wide variety of etching methods, including thermal or vapor etching, isotropic atomic layer etching, radical etching, directional atomic layer etching, and more Perfect for materials scientists, semiconductor physicists, and surface chemists, Atomic Layer Processing will also earn a place in the libraries of engineering scientists in industry and academia, as well as anyone involved with the manufacture of semiconductor technology. The author's close involvement with corporate research & development and academic research allows the book to offer a uniquely multifaceted approach to the subject.

Learn about fundamental and advanced topics in etching with this practical guide Atomic Layer Processing: Semiconductor Dry Etching Technology delivers a hands-on, one-stop resource for understanding etching technologies and their applications. The distinguished scientist, executive, and author offers readers in-depth information on the various etching technologies used in the semiconductor industry, including thermal, isotropic atomic layer, radical, ion-assisted, and reactive ion etching. The book begins with a brief history of etching technology and the role it has played in the information technology revolution, along with a collection of commonly used terminology in the industry. It then moves on to discuss a variety of different etching techniques, before concluding with discussions of the fundamentals of etching reactor design and newly emerging topics in the field such as the role played by artificial intelligence in the technology. Atomic Layer Processing includes a wide variety of other topics as well, all of which contribute to the author's goal of providing the reader with an atomic-level understanding of dry etching technology sufficient to develop specific solutions for existing and emerging semiconductor technologies. Readers will benefit from: A complete discussion of the fundamentals of how to remove atoms from various surfaces An examination of emerging etching technologies, including laser and electron beam assisted etching A treatment of process control in etching technology and the role played by artificial intelligence Analyses of a wide variety of etching methods, including thermal or vapor etching, isotropic atomic layer etching, radical etching, directional atomic layer etching, and more Perfect for materials scientists, semiconductor physicists, and surface chemists, Atomic Layer Processing will also earn a place in the libraries of engineering scientists in industry and academia, as well as anyone involved with the manufacture of semiconductor technology. The author's close involvement with corporate research & development and academic research allows the book to offer a uniquely multifaceted approach to the subject.

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.

Chemical vapor deposition (CVD) techniques have played a major role in the development of modern technology, and the rise of nanotechnology has further increased their importance, thanks to techniques such as atomic layer deposition (ALD) and vapor liquid solid growth, which are able to control the growth process at the nanoscale. This book aims to contribute to the knowledge of recent developments in CVD technology and its applications. To this aim, important process innovations, such as spatial ALD, direct liquid injection CVD, and electron cyclotron resonance CVD, are presented. Moreover, some of the most recent applications of CVD techniques for the growth of nanomaterials, including graphene, nanofibers, and diamond-like carbon, are described in the book.

Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries