Applied Solid State Science: Advances in Materials and Device Research, Volume 2 covers topics about complex oxide materials such as the garnets, which dominate the field of magnetoelasticity and are among the most important laser hosts, and sodalite, which is one of the classic photochromic materials. The book discusses the physics of the interactions of electromagnetic, elastic, and spin waves in single crystal magnetic insulators. The text then describes the mechanism on which inorganic photochromic materials are based, as observed in a variety of materials in single crystal, powder, and glass forms; as well as the chemistry and growth of single crystal materials. Solid state physicists, materials scientists, electrical engineers, and graduate students studying the subjects being discussed will find the book invaluable.

The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.

Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits.

This book is a collection of a set of lectures sponsored by the Bathsheva de Rothschild Seminars. It deals with different aspects of applied physics which are an outgrowth of fundamental research. The courses were given by experts engaged in their respective fields. These review articles are intended to fill a gap between the many research papers that are appearing today in pure science on one hand, and in applied science on the other hand. It is a bridge between these two. It aims at the specialist in applied physics, chemistry and engineering, working in these specialized fields, as well as at the graduate student, interested in solid solid state physics, chemistry and electrical engineering. While this book contains a range of different topics, there is an under lying logic in the choice of the subject material. The first three articles, by Drs. Giordmaine, Friesem and Porto, deal with modern applied optics, which arise to a large extent from the availability of coherent and powerful laser sources. Two articles deal with materials, in particular that of Dr. Chalmers on the theory and principle of solidification and that of Dr. Laudise on the techniques of crystal growth. The last three articles, by Drs. Matthias, Doyle and Prince, are concerned with the use of materials in fields of superconductivity, computer storage and semi conductor photovoltaic effects. Dr. Rose gives a definitive review on human and electronic vision, an out-growth of life-long activity in this field.

This book deals with the philosophy of model use; focuses on the role of models in the natural sciences; and introduces a new paradigm to the social sciences, catastrophe model. It outlines the role of models concerned with conflict problems, particularly problems of military strategy.