Presents state-of-the-art research in microelectronic processing for very large scale integration. Emphasizing applications and techniques, this book provides considerable insight into Japan's technological effort in this important area of science. Focuses on research involving plasma deposition and dry etching. Considerable attention is devoted to MOS gate fabrication, the studies of the influence of process parameters on electrical properties, dry processing technologies, and the theory of plasma chemical reactions.

VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Plasma processing of materials is a critical technology to several of the largest manufacturing industries in the worldâ€"electronics, aerospace, automotive, steel, biomedical, and toxic waste management. This book describes the relationship between plasma processes and the many industrial applications, examines in detail plasma processing in the electronics industry, highlights the scientific foundation underlying this technology, and discusses education issues in this multidisciplinary field. The committee recommends a coordinated, focused, and well-funded research program in this area that involves the university, federal laboratory, and industrial sectors of the community. It also points out that because plasma processing is an integral part of the infrastructure of so many American industries, it is important for both the economy and the national security that America maintain a strong leadership role in this technology.

This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro vides an up-to-date and comprehensive account of the fundamental in teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6.

Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

This book provides a survey of the latest research and developments in plasma technology. In an easy and comprehensive manner, it explores what plasma is and the technologies utilized to produce plasma. It then investigates the main applications and their benefits. Different from other books on the topic that focus on specific aspects of plasma technology, the intention is to provide an introduction to all aspects related to plasma technologies. This book will be an ideal resource for graduate students studying plasma technologies, in addition to researchers in physics, engineering, and materials science Features Accessible and easy to understand Provides simple yet exhaustive explanations of the foundations Explores the latest technologies and is filled with practical applications and case studies