Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty. Synchrotron critical dimension small angle X-ray scattering (CD-SAXS) has unique capabilities to non-destructively monitor the cross-section shape of surface structures with single nanometer uncertainty and can perform overlay metrology to sub-nm uncertainty. In this dissertation, we perform a systematic experimental investigation using CD-SAXS metrology on a hierarchy of semiconductor 3D device architectures including, high-aspect-ratio contact holes, H2 annealed Si fins, and a series of grating type samples at multiple points along a FinFET fabrication process increasing in structural intricacy and ending with fully fabricated FinFET. Comparative studies between CD-SAXS metrology and other relevant semiconductor dimensional metrologies, particularly CDSEM, CD-AFM and TEM are used to determine physical limits of CD-SAXS approach for advanced semiconductor samples. CD-SAXS experimental tradeoffs, advice for model-dependent analysis and thoughts on the compatibility with a semiconductor manufacturing environment are discussed.

The scales involved in modern semiconductor manufacturing and microelectronics continue to plunge downward. Effective and accurate characterization of materials with thicknesses below a few nanometers can be achieved using x-rays. While many books are available on the theory behind x-ray metrology (XRM), X-Ray Metrology in Semiconductor Manufacturing is the first book to focus on the practical aspects of the technology and its application in device fabrication and solving new materials problems. Following a general overview of the field, the first section of the book is organized by application and outlines the techniques that are best suited to each. The next section delves into the techniques and theory behind the applications, such as specular x-ray reflectivity, diffraction imaging, and defect mapping. Finally, the third section provides technological details of each technique, answering questions commonly encountered in practice. The authors supply real examples from the semiconductor and magnetic recording industries as well as more than 150 clearly drawn figures to illustrate the discussion. They also summarize the principles and key information about each method with inset boxes found throughout the text. Written by world leaders in the field, X-Ray Metrology in Semiconductor Manufacturing provides real solutions with a focus on accuracy, repeatability, and throughput.

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

Small errors in critical dimensions (CDs) or deformation of optical components can lead to severe performance degradation in high-resolution imaging and spectroscopy tools. Consistent innovations towards more precise optical elements and assembly procedures have led to high-resolution optical systems in many fields - including telescope, microscopy, lithography, and display technologies. A space x-ray telescope needs more stringent requirements as it observes distant space objects using a limited number of x-ray photons in a harsh space environment. The optical instruments for x-ray telescopes need to be high-resolution, efficient in collecting x-ray photons, and lightweight. Optical elements in x-ray telescopes have large-apertures (typically around 1-2 m2) which are realized by populating them with > 1000 high-quality optical sub-elements (i.e., mirrors or gratings). In this thesis, we limit our attention to an xray grating spectrometer, one of the essential elements in x-ray telescopes. It is placed downstream of the focusing optics and prior to the x-ray detector to disperse nonmonochromatic x rays from distant sources for space-based x-ray spectroscopy. A critical-angle transmission (CAT) grating, a lightweight, freestanding, high-aspect ratio x-ray grating with 200-nm period and 4 [mu]m depth, is a building block for grating spectrometers. More than 1000 high-quality CAT gratings need to be manufactured and precisely aligned within tolerance to build future CAT grating spectrometers. This thesis attacks this manufacturing challenge through 1) inventing metrologies for characterizing CDs, 2) developing alignment processes, and 3) performing design and analysis of CAT grating structural supports. First, a metrology to characterize period variation of CAT gratings was developed. Metrology repeatability of 0.004 nm rms was achieved, successfully characterizing period variations of 0.018 nm rms (1 sigma) over large-area CAT gratings patterned with traditional interference lithography. The demonstrated metrology uncertainty and period variations fulfill the requirements for future x-ray telescope missions. Second, alignment metrology and protocols were developed, demonstrating an ability to align multiple CAT gratings to satisfy alignment requirements ( 6 arcmin or 0.1 deg). The developed alignment protocol is reliable and scalable for flight-level alignment, for which a large volume (1000) of CAT gratings need to be aligned in a fast and accurate manner. Third, a metrology to characterize grating bar tilt variations was developed using small-angle x-ray scattering and a laser setup. The developed metrology demonstrated repeatability of