This book reports on the latest advances in and applications of memristors, memristive devices and systems. It gathers 20 contributed chapters by subject experts, including pioneers in the field such as Leon Chua (UC Berkeley, USA) and R.S. Williams (HP Labs, USA), who are specialized in the various topics addressed in this book, and covers broad areas of memristors and memristive devices such as: memristor emulators, oscillators, chaotic and hyperchaotic memristive systems, control of memristive systems, memristor-based min-max circuits, canonic memristors, memristive-based neuromorphic applications, implementation of memristor-based chaotic oscillators, inverse memristors, linear memristor devices, delayed memristive systems, flux-controlled memristive emulators, etc. Throughout the book, special emphasis is given to papers offering practical solutions and design, modeling, and implementation insights to address current research problems in memristors, memristive devices and systems. As such, it offers a valuable reference book on memristors and memristive devices for graduate students and researchers with a basic knowledge of electrical and control systems engineering.

Physical implementation of the memristor at industrial scale sparked the interest from various disciplines, ranging from physics, nanotechnology, electrical engineering, neuroscience, to intelligent robotics. As any promising new technology, it has raised hopes and questions; it is an extremely challenging task to live up to the high expectations and to devise revolutionary and feasible future applications for memristive devices. The possibility of gathering prominent scientists in the heart of the Silicon Valley given by the 2011 International Joint Conference on Neural Networks held in San Jose, CA, has offered us the unique opportunity of organizing a series of special events on the present status and future perspectives in neuromorphic memristor science. This book presents a selection of the remarkable contributions given by the leaders of the field and it may serve as inspiration and future reference to all researchers that want to explore the extraordinary possibilities given by this revolutionary concept.

The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generation's electronic circuits and for their widespread application in all the areas of industry. In this aspect the analysis of new efficient and advanced electronic elements and circuits is an essential field of the highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides has been investigated since 1970 and it is a promising technology for constructing new electronic memories. It has been established that such oxide materials have the ability for changing their conductance in accordance to the applied voltage and memorizing their state for a long-time interval. Similar behaviour has been predicted for the memristor element by Leon Chua in 1971. The memristor is proposed in accordance to symmetry considerations and the relationships between the four basic electric quantities - electric current i, voltage v, charge q and magnetic flux Ψ. The memristor is an essential passive one-port element together with the resistor, inductor, and capacitor. The Williams HP research group has made a link between resistive switching devices, and the memristor proposed by Chua. A number of scientific papers related to memristors and memristor devices have been issued and several memristor models have been proposed. The memristor is a highly nonlinear component. It relates the electric charge q and the flux linkage, expressed as a time integral of the voltage. The memristor element has the important capability for remembering the electric charge passed through its cross-section and its respective resistance, when the electrical signals are switched off. Due to its nano-scale dimensions, non-volatility and memorizing properties, the memristor is a sound potential candidate for application in computer high-density memories, artificial neural networks and in many other electronic devices.

Nanoscale Memristor Device and Circuits Design provides theoretical frameworks, including (i) the background of memristors, (ii) physics of memristor and their modeling, (iii) menristive device applications, and (iv) circuit design for security and authentication. The book focuses on a broad aspect of realization of these applications as low cost and reliable devices. This is an important reference that will help materials scientists and engineers understand the production and applications of nanoscale memrister devices. A memristor is a two-terminal memory nanoscale device that stores information in terms of high/low resistance. It can retain information even when the power source is removed, i.e., "non-volatile." In contrast to MOS Transistors (MOST), which are the building blocks of all modern mobile and computing devices, memristors are relatively immune to radiation, as well as parasitic effects, such as capacitance, and can be much more reliable. This is extremely attractive for critical safety applications, such as nuclear and aerospace, where radiation can cause failure in MOST-based systems. - Outlines the major principles of circuit design for nanoelectronic applications - Explores major applications, including memristor-based memories, sensors, solar cells, or memristor-based hardware and software security applications - Assesses the major challenges to manufacturing nanoscale memristor devices at an industrial scale

This book provides a comprehensive study of the research outcomes on memristor emulator circuits and includes various analog applications as examples. The authors describe in detail how to design different types of memristor emulators, using active and passive components for different applications. Most of the emulator circuits presented in this book are new and are the outcomes of the authors’ recent research. Coverage also includes the latest technological advances in memristor and memristor emulators. Readers will benefit from an understanding of the fundamental concepts and potential applications related to memristors, since these emulator circuits can be built in the laboratory using inexpensive, off-the-shelf circuit components. Introduces readers to memristor emulator circuit design, using regular off-the-shelf circuit components; Describes analog applications of memristors that can be verified by the proposed emulator circuits; Includes a brief overview of the updated mathematical models of the memristor device, with different material implementations; Equips readers to understand the three fingerprints of memristors, which make them unique, compared to the three known, passive elements (resistor, inductor and capacitor).

Mem-elements for Neuromorphic Circuits with Artificial Intelligence Applications illustrates recent advances in the field of mem-elements (memristor, memcapacitor, meminductor) and their applications in nonlinear dynamical systems, computer science, analog and digital systems, and in neuromorphic circuits and artificial intelligence. The book is mainly devoted to recent results, critical aspects and perspectives of ongoing research on relevant topics, all involving networks of mem-elements devices in diverse applications. Sections contribute to the discussion of memristive materials and transport mechanisms, presenting various types of physical structures that can be fabricated to realize mem-elements in integrated circuits and device modeling. As the last decade has seen an increasing interest in recent advances in mem-elements and their applications in neuromorphic circuits and artificial intelligence, this book will attract researchers in various fields. - Covers a broad range of interdisciplinary topics between mathematics, circuits, realizations, and practical applications related to nonlinear dynamical systems, nanotechnology, analog and digital systems, computer science and artificial intelligence - Presents recent advances in the field of mem-elements (memristor, memcapacitor, meminductor) - Includes interesting applications of mem-elements in nonlinear dynamical systems, analog and digital systems, neuromorphic circuits, computer science and artificial intelligence

Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices offers a pragmatic view on transport phenomena for micro- and nanoscale materials and devices, both as a research tool and as a means to implant new functions in materials. Chapters emphasize transport properties (TP) as a research tool at the micro/nano level and give an experimental view on underlying techniques. The relevance of TP is highlighted through the interplay between a micro/nanocarrier's characteristics and media characteristics: long/short-range order and disorder excitations, couplings, and in energy conversions. Later sections contain case studies on the role of transport properties in functional nanomaterials. This includes transport in thin films and nanostructures, from nanogranular films, to graphene and 2D semiconductors and spintronics, and from read heads, MRAMs and sensors, to nano-oscillators and energy conversion, from figures of merit, micro-coolers and micro-heaters, to spincaloritronics. - Presents a pragmatic description of electrical transport phenomena in micro- and nanoscale materials and devices from an experimental viewpoint - Provides an in-depth overview of the experimental techniques available to measure transport phenomena in micro- and nanoscale materials - Features case studies to illustrate how each technique works - Highlights emerging areas of interest in micro- and nanomaterial transport phenomena, including spintronics