Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
Title | Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment PDF eBook |
Author | P. J. Timans |
Publisher | The Electrochemical Society |
Pages | 488 |
Release | 2008-05 |
Genre | Gate array circuits |
ISBN | 1566776260 |
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS
Title | Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS PDF eBook |
Author | |
Publisher | |
Pages | 658 |
Release | 2005 |
Genre | Technology & Engineering |
ISBN |
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
Title | Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment PDF eBook |
Author | E. P. Gusev |
Publisher | The Electrochemical Society |
Pages | 426 |
Release | 2010-04 |
Genre | Science |
ISBN | 1566777917 |
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Généalogie de la maison de Nettancourt, comtes de Vaubecourt, ... en Champagne. Produite ... au mois de mars 1668
Title | Généalogie de la maison de Nettancourt, comtes de Vaubecourt, ... en Champagne. Produite ... au mois de mars 1668 PDF eBook |
Author | |
Publisher | |
Pages | |
Release | |
Genre | |
ISBN |
Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2
Title | Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 PDF eBook |
Author | Fred Roozeboom |
Publisher | The Electrochemical Society |
Pages | 472 |
Release | 2006 |
Genre | Gate array circuits |
ISBN | 1566775027 |
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/drain, and Channel Engineering So Si-based CMOS 6: New Materials, Processes and Equipment
Title | Advanced Gate Stack, Source/drain, and Channel Engineering So Si-based CMOS 6: New Materials, Processes and Equipment PDF eBook |
Author | E. P. Gusev |
Publisher | |
Pages | 412 |
Release | 2010 |
Genre | |
ISBN | 9781607681410 |
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment
Title | Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment PDF eBook |
Author | V. Narayanan |
Publisher | The Electrochemical Society |
Pages | 367 |
Release | 2009-05 |
Genre | Gate array circuits |
ISBN | 1566777097 |
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.