Annotation. The Proceedings cover five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicongermanium devices, nanoelectronics and ballistic devices, and characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many "first" and break-through results, as has become a tradition with the Lester Eastman Conference and will allow readers to get up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of the state-of-the art and of "hot off the press" results making the book to be required reading for engineers, scientists, and students working on advanced and high speed device technology. Book jacket.

This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.