Concurrent to providing material to the research and device groups of the Solid State organization during the past two years, a facility was developed which has the ability to produce, process, and evaluate compound semiconductor materials with a minimum expenditure of effort. The maximum value of this facility will probably be realized by intensified application to material problems, which require evaluation of large numbers of materials of diversified and unknown behavior. Future work in the crystal laboratory is to be directed to the preparation and study of semiconductors of the multielement compound and solid solution type, particularly for the purpose of locating more efficient thermoelectric materials. Specifically, the intentions are to extend the hand flame and associated techniques and the special thermal analysis method to establish the stoichiometry and behavior of the ternary compounds. (Author).

In this book top experts treat general thermodynamic aspects of crystal fabrication; numerical simulation of industrial growth processes; commercial production of bulk silicon, compound semiconductors, scintillation and oxide crystals; X-ray characterization; and crystal machining. Also, the role of crystal technology for renewable energy and for saving energy is discussed. It will be useful for scientists and engineers involved in crystal and epilayer fabrication as well as for teachers and graduate students in material science, chemical and metallurgical engineering, and micro- and optoelectronics, including nanotechnology.

Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals. Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. They have assembled an international team of experts who present the current challenges, latest methods and new applications for producing these materials necessary for the electronics industry using bulk crystal growth technology. From the contents: * General aspects of crystal growth technology * Compound semiconductors * Halides and oxides * Crystal growth for sustaining energy * Crystal machining