For a decade, with the uptake of 4G, we have become accustomed to the relentless increase in data and services on the move. The deployment of 5G is advancing crucial key performance indicators (KPIs), along with quality of service (QoS). Setting the horizon to 2030 and later, 6G will take the KPIs to numbers 100–1000 times better than 5G. Yet, the actual disruption of 6G and future networks (FN) will take place following other unprecedented paths. Artificial intelligence (AI) will be exploited in a threadlike fashion, at any level of the network physical infrastructure. This will introduce, to date unknown features, like self-sustaining, self-evolution and high-resilience of small portions of the infrastructure, pioneering the concept of a network of networks. Each segment of the infrastructure will bear a high degree of independence, while working at the same time as a whole, in full orchestration with the rest of the network. Given such a scenario, this book claims that the established and currently in use paradigms for the design and development of hardware–software (HW–SW) systems, are not appropriate to address the challenges of 6G and, further ahead, of FN. In response, unprecedented design approaches are suggested, relying on a fresh reinterpretation of the standard concept of HW, with specific attention to the network edge and edge intelligence (EI). This work develops some conceptual tools that may help address the technical challenges resulting from the intricate scenario sketched above. Within the mentioned HW reconceptualization, a pivotal role is forecasted for microtechnologies and nanotechnologies, intended with a broad meaning, which embraces, among others, devices, systems (MEMS/NEMS) and materials.

Closes the gap between hardcore-theoretical and purely experimental RF-MEMS books. The book covers, from a practical viewpoint, the most critical steps that have to be taken in order to develop novel RF-MEMS device concepts. Prototypical RF-MEMS devices, both including lumped components and complex networks, are presented at the beginning of the book as reference examples, and these are then discussed from different perspectives with regard to design, simulation, packaging, testing, and post-fabrication modeling. Theoretical concepts are introduced when necessary to complement the practical hints given for all RF-MEMS development stages. Provides researchers and engineers with invaluable practical hints on how to develop novel RF-MEMS device concepts Covers all critical steps, dealing with design, simulation, optimization, characterization and fabrication of MEMS for radio-frequency applications Addresses frequently disregarded issues, explicitly treating the hard to predict interplay between the three-dimensional device structure and its electromagnetic functionality Bridges theory and experiment, fundamental concepts are introduced with the application in mind, and simulation results are validated against experimental results Appeals to the practice-oriented R&D reader: design and simulation examples are based on widely known software packages such as ANSYS and the hardware description language Verilog.

A guide to flip chip technologies, for professionals in flip chip and MCM research and development, and for engineers and technical managers choosing design and manufacturing processes for electronic packaging and interconnect systems. Discusses economic, design, material, quality, and reliability issues of flip chip technologies, and details aspects of classical solder-bumped flip chip interconnect technologies; the next generations of flip chip technologies; and known-good-die testing for multiple module applications. Annotation copyright by Book News, Inc., Portland, OR

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Collecting state-of-the-art knowledge from information scattered throughout the literature, this handbook describes magnetic materials and sensors, the testing of magnetic materials, and applications of magnetic measurements. It presents an up-to-date, accessible account of modern magnetic measurement techniques. The book discusses the fundamentals of magnetism and covers contemporary magnetic materials and sensors. It also explores applications of magnetic diagnostics in medicine, magnetoarcheology, and magnetic imaging. An extensive list of references is included at the end of each chapter.

This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies.

Introduction. Software runaway war stories. Software runaway remedies. Conclusions.