75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

The fifth volume in Jenny Stanford Series on Intelligent Nanosystems, entitled Outlooking Beyond Nanoelectronics and Nanosystems: Ultra Scaling, Pervasiveness, Sustainable Integration, and Biotic Cross-Inspiration, collects global reviews on (1) the historical cross-inspiration of technologies with nature, their evolution towards nanoelectronic and nanosystem components and their sustainability; (2) new materials, techniques, and pervasive applications out of mainstream; and (3) memristor foundation and new bioengineering developments. The covered topics include ultra scaling with its limits, alternatives and prospects, superior energy efficiency and pervasiveness to non-conventional applications; the evaluation of information technology sustainability, environmental impact and life cycles; prospective fabrication techniques, materials and components, their multifunctional extensions for characterization, fabrication, high-resolution quantum sensing, energy and information storage; life science–inspired memristors and edge of chaos; and bioengineering by nanostructured hybrid smart systems.

LED Lighting is a self-contained and introductory-level book featuring a blend of theory and applications that thoroughly covers this important interdisciplinary area. Building on the underlying fields of optics, photonics, and vision science, it comprises four parts. PART I is devoted to fundamentals. The behavior of light is described in terms of rays, waves, and photons. Each of these approaches is best suited to a particular set of applications. The properties of blackbody radiation, thermal light, and incandescent light are derived and explained. The essentials of semiconductor physics are set forth, including the operation of junctions and heterojunctions, quantum wells and quantum dots, and organic and perovskite semiconductors. PART II deals with the generation of light in semiconductors, and details the operation and properties of III-V semiconductor devices (MQWLEDs and μLEDs), quantum-dot devices (QLEDs & WOLEDs), organic semiconductor devices (OLEDs, SMOLEDs, PLEDs, & WOLEDs), and perovskite devices (PeLEDs, PPeLEDs, QPeLEDs, & PeWLEDs). PART III focuses on vision and the perception of color, as well as on colorimetry. It delineates radiometric and photometric quantities as well as efficacy and efficiency measures. It relays the significance of metrics often encountered in LED lighting, including the color rendering index (CRI), color temperature (CT), correlated color temperature (CCT), and chromaticity diagram. PART IV is devoted to LED lighting, focusing on its history and salutary features, and on how this modern form of illumination is deployed. It describes the principal components used in LED lighting, including white phosphor-conversion LEDs, chip-on-board (COB) devices, color-mixing LEDs, hybrid devices, LED filaments, retrofit LED lamps, LED luminaires, and OLED light panels. It concludes with a discussion of smart lighting and connected lighting. Each chapter contains highlighted equations, color-coded figures, practical examples, and reading lists.

In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Drawing from philosophy, religion, biology, behavioral and social sciences, and the arts, The Routledge International Handbooks of Multidisciplinary Perspectives on Character Development, Volumes I and II, present cutting-edge scholarship about the concept of character across the life span, the developmental and contextual bases of character, and the key organizations of societal sectors, within and across nations, that promote character development in individuals, families, and communities. This second volume, Moderators, Threats, and Contexts, focuses on the moderators and covariates of character development with chapters pertaining to cultural- and contextual-based exemplars of character development; grit, achievement, and resilience; hope for the future; and parenting and self-regulation. With contributions from international experts, Volume II goes on to discuss threats to moral, positive, or virtuous character development, as well as the different contexts wherein the character is studied and promoted. Special attention is paid to the centers of excellence at universities around the world that specialize in character development research and character education. This comprehensive publication is an essential reference for researchers and graduate students in behavioral sciences, biology, philosophy, theology, and economics, as well as practitioners leading or evaluating character education or character development programs around the world. Find Volume I: Conceptualizing and Defining Character here: www.routledge.com/9781032169491