This book explores the challenges and presents best strategies for designing Through-Silicon Vias (TSVs) for 3D integrated circuits. It describes a novel technique to mitigate TSV-induced noise, the GND Plug, which is superior to others adapted from 2-D planar technologies, such as a backside ground plane and traditional substrate contacts. The book also investigates, in the form of a comparative study, the impact of TSV size and granularity, spacing of C4 connectors, off-chip power delivery network, shared and dedicated TSVs, and coaxial TSVs on the quality of power delivery in 3-D ICs. The authors provide detailed best design practices for designing 3-D power delivery networks. Since TSVs occupy silicon real-estate and impact device density, this book provides four iterative algorithms to minimize the number of TSVs in a power delivery network. Unlike other existing methods, these algorithms can be applied in early design stages when only functional block- level behaviors and a floorplan are available. Finally, the authors explore the use of Carbon Nanotubes for power grid design as a futuristic alternative to Copper.

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.

A comprehensive guide to TSV and other enabling technologies for 3D integration Written by an expert with more than 30 years of experience in the electronics industry, Through-Silicon Vias for 3D Integration provides cutting-edge information on TSV, wafer thinning, thin-wafer handling, microbumping and assembly, and thermal management technologies. Applications to highperformance, high-density, low-power-consumption, wide-bandwidth, and small-form-factor electronic products are discussed. This book offers a timely summary of progress in all aspects of this fascinating field for professionals active in 3D integration research and development, those who wish to master 3D integration problem-solving methods, and anyone in need of a low-power, wide-bandwidth design and high-yield manufacturing process for interconnect systems. Coverage includes: Nanotechnology and 3D integration for the semiconductor industry TSV etching, dielectric-, barrier-, and seed-layer deposition, Cu plating, CMP, and Cu revealing TSVs: mechanical, thermal, and electrical behaviors Thin-wafer strength measurement Wafer thinning and thin-wafer handling Microbumping, assembly, and reliability Microbump electromigration Transient liquid-phase bonding: C2C, C2W, and W2W 2.5D IC integration with interposers 3D IC integration with interposers Thermal management of 3D IC integration 3D IC packaging

TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters. A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology. Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods Offers a systematic and comparative literature review of HR-Si interposer technology by topic Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems Gives a systematic and accessible accounting on this leading technology

The first encompassing treatise of this new, but very important field puts the known physical limitations for classic 2D electronics into perspective with the requirements for further electronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The contributions come from key players in the field, from both academia and industry, including such companies as Lincoln Labs, Fraunhofer, RPI, ASET, IMEC, CEA-LETI, IBM, and Renesas.

This book explores the challenges and presents best strategies for designing Through-Silicon Vias (TSVs) for 3D integrated circuits. It describes a novel technique to mitigate TSV-induced noise, the GND Plug, which is superior to others adapted from 2-D planar technologies, such as a backside ground plane and traditional substrate contacts. The book also investigates, in the form of a comparative study, the impact of TSV size and granularity, spacing of C4 connectors, off-chip power delivery network, shared and dedicated TSVs, and coaxial TSVs on the quality of power delivery in 3-D ICs. The authors provide detailed best design practices for designing 3-D power delivery networks. Since TSVs occupy silicon real-estate and impact device density, this book provides four iterative algorithms to minimize the number of TSVs in a power delivery network. Unlike other existing methods, these algorithms can be applied in early design stages when only functional block- level behaviors and a floorplan are available. Finally, the authors explore the use of Carbon Nanotubes for power grid design as a futuristic alternative to Copper.