Wireless Power Transfer (WPT) is considered to be an innovative game changing technology. The same radio wave and electromagnetic field theory and technology for wireless communication and remote sensing is applied for WPT. In conventional wireless communication systems, information is “carried” on a radio wave and is then transmitted over a distance. In WPT however, the energy of the radio wave itself is transmitted over a distance. Wireless communication technology has proven to be extremely useful, however in future it should be even more useful to apply both wireless communication and wireless power technologies together.There are various WPT technologies, e.g. inductive near field WPT, resonance coupling WPT, WPT via radio waves, and laser power transfer. Recent Wireless Power Transfer Technologies via Radio Waves focusses on recent technologies and applications of the WPT via radio waves in far field. The book also covers the history, and future, of WPT via radio waves, as well as safety, EMC and coexistence of radio waves for WPT.Technical topics discussed in the book include:  Radio Wave Generation Radio Wave Amplification with Solid States Circuit and Microwave Tubes Antenna and Beam Forming Technologies Radio Wave Conversion/Rectification to Electricity Battery-less Sensor Applications toward Internet of Things (IoT) Solar Power Satellite Application Safety, EMC, Coexistence of Radio Waves for the WPTWPT is an old technology based on the basic theory of radio waves, however WPT is also a state-of-the-art technology for the latest applications in IoT, sensor networks, wireless chargers for mobile phones, and solar power satellite. The theory behind these technologies, as well as applications, are explained in this book.

RF power amplifiers are implemented in communication, semiconductor wafer processing, magnetic resonance imaging (MRI), and radar systems to produce RF signal with the desired characteristics to perform several critical tasks in the entire system. They can be designed to operate in linear or switch-mode, depending on the specific application. This book explores the design and implementation methods for both linear and switch-mode amplifiers with real world engineering problems. The text discusses phased controlled switch-mode amplifiers and distortion and modulation effects in RF amplifiers. It illustrates the interface and integration of components and sub-systems for RF amplifiers. The material is further reinforced with MATLAB design files.

This book presents a variety of perspectives on vision-based applications. These contributions are focused on optoelectronic sensors, 3D & 2D machine vision technologies, robot navigation, control schemes, motion controllers, intelligent algorithms and vision systems. The authors focus on applications of unmanned aerial vehicles, autonomous and mobile robots, industrial inspection applications and structural health monitoring. Recent advanced research in measurement and others areas where 3D & 2D machine vision and machine control play an important role, as well as surveys and reviews about vision-based applications. These topics are of interest to readers from diverse areas, including electrical, electronics and computer engineering, technologists, students and non-specialist readers. • Presents current research in image and signal sensors, methods, and 3D & 2D technologies in vision-based theories and applications; • Discusses applications such as daily use devices including robotics, detection, tracking and stereoscopic vision systems, pose estimation, avoidance of objects, control and data exchange for navigation, and aerial imagery processing; • Includes research contributions in scientific, industrial, and civil applications.

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

"Power is dissipated (lost) when this current flows through any resistance, which includes the amplifier's transistor. This dissipated power is the product of the current in the load times the voltage difference between the supply voltage to the amplifier and the output signal voltage. When the voltage supplied to the amplifier is a constant value, and by far the most common design practice, the situation in Fig. 1-2a results. Power dissipation in the amplifier is maximum when the output signal voltage is 1/2 of the supply voltage. When the output signal voltage is higher, even though the current value is larger the voltage drop is less and the power dissipation is lower. Similarly, when the output signal voltage is small, even though the voltage drop is now large the current in the load is smaller and again the power dissipation is lower"--