This text focuses on the conductive characteristics of crystalline compounds, including the topics: GaN and compliant substrates; optical characterization; heterostructure transistors; quantum dots; visible emitters; GaN and related compounds; and passivation and growth issues in GaAs."

Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

The 24th Symposium attracted over 250 submissions, predominantly on growth and characterization. Compound semiconductors have become pervasive in applications that are unique and could not be addressed in any other viable manner, such as laser diodes in compact disk players, high brightness LEDs in automotive tail lights, low noise and low power amplifiers in cellular phones, infra-red diodes in remote controls, low noise amplifier front ends in televisions, and the recent high-brightness blue LEDs. Many of the contributions that engendered these novel products were first reported at the International Symposium on Compound Semiconductors. The procceedings of this conferences are an essential reference for all researchers in semiconductor physics, optoelectronics, electronic and electrical engineering, researching the properties and applications of compound materials.

An international perspective on the latest research, Compound Semiconductors 1999 presents an overview of important developments in all III-V compound semiconductors such as GaAs, InP, and GaN; II-VI compounds such as ZnS, ZnSe, and CdTe; IV-IV compounds such as SiC and SiGe; and IV-VI compounds such as PbTe and SnTe. The book emphasizes piezoelectric (or potentially smart) material heterostructures (Ga, Al, In)N, which will influence future research and development funding. As the preeminent forum for research in compound materials and their applications in devices, this essential library reference is invaluable reading for all researchers in semiconductor physics, and electronic and electrical engineering.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.

This text constitutes the proceedings from the 25th IEEE International Symposium on Compound Semiconductors, which took place in 2000. Topics covered include emitter science and technology, heterostructure devices and quantum effect materials and devices.