Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Comprehensive Biomedical Physics, Ten Volume Set is a new reference work that provides the first point of entry to the literature for all scientists interested in biomedical physics. It is of particularly use for graduate and postgraduate students in the areas of medical biophysics. This Work is indispensable to all serious readers in this interdisciplinary area where physics is applied in medicine and biology. Written by leading scientists who have evaluated and summarized the most important methods, principles, technologies and data within the field, Comprehensive Biomedical Physics is a vital addition to the reference libraries of those working within the areas of medical imaging, radiation sources, detectors, biology, safety and therapy, physiology, and pharmacology as well as in the treatment of different clinical conditions and bioinformatics. This Work will be valuable to students working in all aspect of medical biophysics, including medical imaging and biomedical radiation science and therapy, physiology, pharmacology and treatment of clinical conditions and bioinformatics. The most comprehensive work on biomedical physics ever published Covers one of the fastest growing areas in the physical sciences, including interdisciplinary areas ranging from advanced nuclear physics and quantum mechanics through mathematics to molecular biology and medicine Contains 1800 illustrations, all in full color

This book presents the latest scientific developments in the field of positron emission tomography (PET) dealing with data acquisition, image processing, applications, statistical analysis, tracer development, parameter estimation, and kinetic modeling. It covers improved methodology and the application of existing techniques to new areas. The text also describes new approaches in scanner design and image processing, and the latest techniques for modeling and statistical analyses. This volume will be a useful reference for the active brain PET scientist, as well as a valuable introduction for students and researchers who wish to take advantage of the capabilities of PET to study the normal and diseased brain. - Authored by international authorities in PET - Provides the latest up-to-date techniques and applications - Covers all fundamental disciplines of PET in one volume - A comprehensive resource for students, clinicians, and new PET researchers

Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

Issues for 1973- cover the entire IEEE technical literature.