Circuit simulation has become an essential tool in circuit design and without it's aid, analogue and mixed-signal IC design would be impossible. However the applicability and limitations of circuit simulators have not been generally well understood and this book now provides a clear and easy to follow explanation of their function. The material covered includes the algorithms used in circuit simulation and the numerical techniques needed for linear and non-linear DC analysis, transient analysis and AC analysis. The book goes on to explain the numeric methods to include sensitivity and tolerance analysis and optimisation of component values for circuit design. The final part deals with logic simulation and mixed-signal simulation algorithms. There are comprehensive and detailed descriptions of the numerical methods and the material is presented in a way that provides for the needs of both experienced engineers who wish to extend their knowledge of current tools and techniques, and of advanced students and researchers who wish to develop new simulators.

As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject.

Recent years have seen rapid strides in the level of sophistication of VLSI circuits. On the performance front, there is a vital need for techniques to design fast, low-power chips with minimum area for increasingly complex systems, while on the economic side there is the vastly increased pressure of time-to-market. These pressures have made the use of CAD tools mandatory in designing complex systems. Timing Analysis and Optimization of Sequential Circuits describes CAD algorithms for analyzing and optimizing the timing behavior of sequential circuits with special reference to performance parameters such as power and area. A unified approach to performance analysis and optimization of sequential circuits is presented. The state of the art in timing analysis and optimization techniques is described for circuits using edge-triggered or level-sensitive memory elements. Specific emphasis is placed on two methods that are true sequential timing optimizations techniques: retiming and clock skew optimization. Timing Analysis and Optimization of Sequential Circuits covers the following topics: Algorithms for sequential timing analysis Fast algorithms for clock skew optimization and their applications Efficient techniques for retiming large sequential circuits Coupling sequential and combinational optimizations. Timing Analysis and Optimization of Sequential Circuits is written for graduate students, researchers and professionals in the area of CAD for VLSI and VLSI circuit design.

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

This book was written to arm engineers qualified and knowledgeable in the area of VLSI circuits with the essential knowledge they need to get into this exciting field and to help those already in it achieve a higher level of proficiency. Few people truly understand how a large chip is developed, but an understanding of the whole process is necessary to appreciate the importance of each part of it and to understand the process from concept to silicon. It will teach readers how to become better engineers through a practical approach of diagnosing and attacking real-world problems.

Introduction The exponential scaling of feature sizes in semiconductor technologies has side-effects on layout optimization, related to effects such as inter connect delay, noise and crosstalk, signal integrity, parasitics effects, and power dissipation, that invalidate the assumptions that form the basis of previous design methodologies and tools. This book is intended to sample the most important, contemporary, and advanced layout opti mization problems emerging with the advent of very deep submicron technologies in semiconductor processing. We hope that it will stimulate more people to perform research that leads to advances in the design and development of more efficient, effective, and elegant algorithms and design tools. Organization of the Book The book is organized as follows. A multi-stage simulated annealing algorithm that integrates floorplanning and interconnect planning is pre sented in Chapter 1. To reduce the run time, different interconnect plan ning approaches are applied in different ranges of temperatures. Chapter 2 introduces a new design methodology - the interconnect-centric design methodology and its centerpiece, interconnect planning, which consists of physical hierarchy generation, floorplanning with interconnect planning, and interconnect architecture planning. Chapter 3 investigates a net-cut minimization based placement tool, Dragon, which integrates the state of the art partitioning and placement techniques.