We have fabricated high-efficiency thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn1-xGaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction(GIXRD) were performed on devices prepared from EP and AP precursor films. We have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

The authors have fabricated high-efficiency thin-film CuIn{sub 1-x}GaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1-x}GaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

The authors have fabricated high-efficiency thin-film CuIn{sub 1-x}Ga(subscript x)Se2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1-x}Ga(subscript x)Se2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

High efficiency CuIn[subscript 1-x]Ga[subscript x]Se[subscript 2-y]S[subsript y] (CIGSS)/CdS thin-film solar cells were prepared by optimizing the Mo back contact layer and optimizing the parameters for preparing CIGSS absorber layer using diethylselenide as selenium source. Mo is used as back contact layer in I-III-VI2 compound thin-film solar cells. The Mo film was sputter deposited on 2.5 cm x 10 cm soda-lime glass using DC magnetron sputtering for studying the adhesion to the substrate and chemical reactivity of Mo with selenium and sulfur containing gas at maximum film growth temperature. Mo being a refractory material develops compressive and tensile stresses depending on the deposition conditions. Films deposited at a sputtering power 300 Watts and 0.3 x 10−3 Torr working argon pressure develop compressive stresses, while the films deposited at 200 Watts and 5 x 10−3 Torr pressure develops tensile stresses. Four sets of experiments were carried out to achieve an optimum deposition cycle to deposit stress free Mo. In a series of experiments, initially Mo with a thickness of 138 nm was deposited at 300 W power and 0.3 x 10−3 Torr pressure to create compressive stresses. In a second experiment Mo with a thickness of 127 nm was deposited at a power of 200W and a pressure of 5 x 10−3 Torr. In a third experiment, two high power cycles were sandwiched between three low power cycles with a total film thickness of 330 nm. In a fourth experiment two low power cycles were sandwiched between three high power cycles resulting in an effective thickness of 315 nm. It was found that the deposition sequence with two tensile stressed layers sandwiched between three compressively stressed layers had the best adhesion, limited reactivity and compact nature.

Solar Energy Conversion and Storage: Photochemical Modes showcases the latest advances in solar cell technology while offering valuable insight into the future of solar energy conversion and storage. Focusing on photochemical methods of converting and/or storing light energy in the form of electrical or chemical energy, the book:Describes various t