This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature

Provides a thorough understanding of the chemistry and physics of defects, enabling the reader to manipulate them in the engineering of materials. Reinforces theoretical concepts by placing emphasis on real world processes and applications. Includes two kinds of end-of-chapter problems: multiple choice (to test knowledge of terms and principles) and more extensive exercises and calculations (to build skills and understanding). Supplementary material on crystallography and band structure are included in separate appendices.

This new series Mechanics and Physics of Discrete Systems aims to provide a coherent picture of the modern development of discrete physical systems. Each volume will offer an orderly perspective of disciplines such as molecular dynamics, crystal mechanics and/or physics, dislocation, etc. Emphasized in particular are the fundamentals of mechanics and physics that play an essential role in engineering applications.Volume 1, Gauge Theory and Defects in Solids, presents a detailed development of a rational theory of the dynamics of defects and damage in solids. Solutions to field equations are used to determine stresses, dislocation densities and currents that arise from histories of loading of boundaries of bodies. Analysed in detail is a gauge theory with a gauge group that is not semi-simple, and whose action occurs at the classical macroscopic level. Yang-Mills theory is applied where the state variables are elastic displacements in solids, determination of mechanical and electromagnetic observables by choice of gauge conditions is demonstrated, and practices of classical dislocation theory are derived from first principles.

This book stems from a course on Micromechanics that I started about fifteen years ago at Northwestern University. At that time, micromechanics was a rather unfamiliar subject. Although I repeated the course every year, I was never convinced that my notes have quite developed into a final manuscript because new topics emerged constantly requiring revisions, and additions. I finally came to realize that if this is continued, then I will never complete the book to my total satisfaction. Meanwhile, T. Mori and I had coauthored a book in Japanese, entitled Micromechanics, published by Baifu-kan, Tokyo, in 1975. It received an extremely favorable response from students and re searchers in Japan. This encouraged me to go ahead and publish my course notes in their latest version, as this book, which contains further development of the subject and is more comprehensive than the one published in Japanese. Micromechanics encompasses mechanics related to microstructures of materials. The method employed is a continuum theory of elasticity yet its applications cover a broad area relating to the mechanical behavior of materi als: plasticity, fracture and fatigue, constitutive equations, composite materi als, polycrystals, etc. These subjects are treated in this book by means of a powerful and unified method which is called the 'eigenstrain method. ' In particular, problems relating to inclusions and dislocations are most effectively analyzed by this method, and therefore, special emphasis is placed on these topics.

This textbook provides students with a complete working knowledge of the properties of imperfections in crystalline solids. Readers will learn how to apply the fundamental principles of mechanics and thermodynamics to defect properties in materials science, gaining all the knowledge and tools needed to put this into practice in their own research. Beginning with an introduction to defects and a brief review of basic elasticity theory and statistical thermodynamics, the authors go on to guide the reader in a step-by-step way through point, line, and planar defects, with an emphasis on their structural, thermodynamic, and kinetic properties. Numerous end-of-chapter exercises enable students to put their knowledge into practice, and with solutions for instructors and MATLAB® programs available online, this is an essential text for advanced undergraduate and introductory graduate courses in crystal defects, as well as being ideal for self-study.

Annotation Describes the development and application of the quasiparticle method in the modern quantum theory of solids, and presents an original general nonlinear dynamics theory of the deformable solids with quasiparticle excitations. Acidic paper. Annotation copyrighted by Book News, Inc., Portland, OR.

Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.