On the island of Koh Panyee, in a village built on stilts, there is no open space. How will a group of Thai boys play soccer? After watching the World Cup on television, a group of Thai boys is inspired to form their own team. But on the island of Koh Panyee, in a village built on stilts, there is no open space. The boys can play only twice a month on a sandbar when the tide is low enough. Everything changes when the teens join together to build their very own floating soccer field. This inspiring true story by debut author Scott Riley is gorgeously illustrated by Nguyen Quang and Kim Lien. Perfect for fans of stories about sports, beating seemingly impossible odds, and places and cultures not often shown in picture books. "A compelling book for football [soccer] fans and readers seeking examples of ingenuity."—starred, Publishers Weekly

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.

Information technology is essential to our daily life, and the limitations of silicone based memory systems mean a growing amount of research is focussed on finding an inexpensive alternative to meet our needs and allow the continued development of the industry. Inorganic silicone based technology is increasingly costly and complex and is physically limited by the problems of scaling down. Organic electrical memory devices are comparatively low cost, offer flexibility in terms of chemical structure, are compatible with flexible substrates and allow easy processing. For these reasons polymeric memory nanoscale materials are considered by many to be a potential substitute for conventional semiconductor memory systems. This edited book focusses solely on organic memory devices, providing a full background and overview of the area before bringing the reader up to date with the current and ongoing research in this area. The broad appeal of this book will be applicable to a wide range of researchers and those working in industry, in particular those working in materials, electrical and chemical engineering.

This book is about modern torpedo technology and naval mine design. It is written by an expert in underwater weapon systems. The author has spent many years designing torpedoes in all their aspects from homing to dynamics and control engineering, as well as torpedo proximity fuzes. He has also designed all types of naval mines. The author initially discusses the nature of underwater explosions and the detailed designing of torpedo electromagnetic (EM) proximity fuzes based on it. The topic of EM proximity fuzes, considered a complex subject, is treated in an easy-to-understand manner. The topic is well explained with examples. Torpedo homing is then discussed in substantial detail as well as wake homing. The author discusses basic sonar theory for the uninitiated. He then discusses the evolution of torpedo homing and concludes with a cursory examination of the homing head of a contemporary torpedo.

A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.