In the past few years, System in Package (SiP) design has fueled a revolution in the use of modules in wireless devices due its effectiveness in meeting the increasingly demanding requirements for reliability, shielding, performance, size, and cost. Here's the first comprehensive resource on SiP design techniques that offers designers state-of-the-art packaging know-how. Moreover, the book provides numerous examples that illustrate real-world capabilities, constraints, trade-offs, and options at every step.

Substrate Integrated Suspended Line Circuits and Systems provides a systematic overview of the new transmission line - the substrate-integrated suspension line (SISL). It details the fundamentals and classical application examples of the SISL. The basic SISL concept and structure, various passive circuits and active circuits, and front-end sub-systems are systematically introduced. Featuring research on topics such as high-performance RF/microwave/mm-wave circuits and system, this book is ideal for researchers, engineers, scientists, scholars, educators, and students. Since transmission line is a fundamental component of microwave and mm-wave circuits, the properties of a transmission line, such as losses, size, and dispersion, are vital to the performance of the whole system. Suspended line has been proved to be an excellent transmission line, as it has attractive features such as low loss, weak dispersion, high power capacity, and low effective dielectric constant. However, Conventional waveguide suspended line circuits require metal housing to form air cavities which is Substrate Integrated Suspended Line Circuits and Systems essential to the operation of suspended lines circuits. Also, the metal shell should provide mechanical support and shielding, which contribute to large size and heavy weight. Meanwhile, precise mechanical fabrication and assembling are strongly required, which brings difficulties to the design and fabrication of conventional suspended line circuits, and the manufacturing cost of suspended line circuits increases correspondingly. In this book, we will introduce a new platform of high-performance transmission line, i.e. substrate integrated suspended line (SISL). SISL keeps all the merits of the suspended line while overcomes the drawbacks of conventional waveguide suspended line circuits. Moreover, it is self-packaged and highly integrated. The basic SISL concept and structure, various passive circuits and active circuits, and front-end sub-systems will be systematically introduced. Featuring research on topics such as high-performance RF/microwave/mm-wave circuits and system, this book is ideally designed for researchers, engineers, scientists, scholars, educators, and students.

Fully updated and including entirely new chapters, this Second Edition provides in-depth coverage of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Featuring extensive formulas for lumped elements, design trade-offs, and an updated and current list of references, the book helps you understand the value and usefulness of lumped elements in the design of RF, microwave and millimeter wave components and circuits. You’ll find a balanced treatment between standalone lumped elements and their circuits using MICs, MMICs and RFICs technologies. You’ll also find detailed information on a broader range RFICs that was not available when the popular first edition was published. The book captures – in one consolidated volume -- the fundamentals, equations, modeling, examples, references and overall procedures to design, test and produce microwave components that are indispensable in industry and academia today. With its superb organization and expanded coverage of the subject, this is a must-have, go-to resource for practicing engineers and researchers in industry, government and university and microwave engineers working in the antenna area. Students will also find it a useful reference with its clear explanations, many examples and practical modeling guidelines.

An advanced reference documenting, in detail, every step of a real System-in-Package (SiP) design flow Written by an engineer at the leading edge of SiP design and implementation, this book demonstrates how to design SiPs using Mentor EE Flow. Key topics covered include wire bonding, die stacks, cavity, flip chip and RDL (redistribution layer), Embedded Passive, RF design, concurrent design, Xtreme design, 3D real-time DRC (design rule checking), and SiP manufacture. Extensively illustrated throughout, System in Package Design and Simulation covers an array of issues of vital concern for SiP design and fabrication electronics engineers, as well as SiP users, including: Cavity and sacked dies design FlipChip and RDL design Routing and coppering 3D Real-Time DRC check SiP simulation technology Mentor SiP Design and Simulation Platform Designed to function equally well as a reference, tutorial, and self-study, System in Package Design and Simulation is an indispensable working resource for every SiP designer, especially those who use Mentor design tools.

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.

Written by an internationally recognized as an expert on the subject of microwave (MW) tubes, this book presents and describes the many types of microwave tubes, and despite competition from solid-state devices (those using GaN, SiC, et cetera), which continue to be used widely and find new applications in defense, communications, medical, and industrial drying. Helix traveling wave tubes (TWTs), as well as coupled cavity TWTs are covered. Klystrons, and how they work, are described, along with the physics behind it and examples of devices and their uses. Vacuum electron devices are explained in detail and examines the harsh environment that must exist in tubes if they are to operate properly. The secondary emission process and its role in the operation of crossed-field devices is also discussed. The design of collectors for linear-beam tubes, including power dissipation and power recovery, are explored. Discussions of important noise sources and techniques that can be used to minimize their effects are also included. Presented in full color, this book contains a balance of practical and theoretical material so that those new to microwave tubes as well as experienced microwave tube technicians, engineers, and managers can benefit from its use.

All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.