Layered thin film structures often have unusual properties which make them appealing in a wide range of applications. Fabrication of submicron and nanometer multilayers can produce metastable phases that many not be predicted from the bulk equilibrium phase diagrams. Understanding the growth, structure, stability and properties of multilayers, and controlling their microstructure through processing, are important in many applications. This book focuses on the relationship of structure and processing to the properties that are relevant to all researchers in the field of multilayers. Topics include: phase transformation and reaction kinetics; processing and growth; structural characterization; magnetic, electronic and optical properties; mechanical properties; X-ray optics; thin-film interfaces.

"Surface Characterization" provides an authoritative guide to the wide range of powerful techniques that are used to characterize the surfaces of materials. Practical in approach, it not only describes the major analytical techniques but emphasizes how they can be used to solve a multitude of chemical and physical problems. A special feature of the book is that the various techniques are grouped according to the material property under investigation. These parts are preceded by an overview comparing the capabilities of the characterization methods available. Extensive data tables allow the reader to assess rapidly the strengths as well as the pitfalls inherent in each method. Chapters on chemical composition, optical and crystallographic properties, microtopography, surface processes, tribological, electrical and magnetic properties of surface films are featured. In addition, chapters specializing on applications within the life sciences on the microscopic scale and chemometrics are included. "Surface Characterization" is addressed to both academic and industrial audiences. Scientists and engineers working on the production and development of new materials will find it an invaluable reference source. Physicist, chemists, chemical engineers, material scientists and engineers from every area of materials research will benefit from the wealth of practical advice the book provides.

Tremendous advances have been made in the use of silicides as contacts and interconnects in micro-electronic devices and as active layers in sensors. A flourish of novel fabrication concepts and characterization techniques has led to high-quality silicide devices and a better understanding of the electronic and micrometallurgical properties of their interfaces. However, the shrinking physical dimensions of ULSI devices beyond the deep submicron regime now poses new and serious materials challenges for the development of manufacturable silicide processes. Scientists and engineers from materials science, physics, chemistry, device, processing and other disciplines come together in this book to examine the current issues facing silicide thin-film applications. Topics include: silicide fundamentals - energetics and kinetics; processing of silicide thin films; ULSI issues; CVD silicides; semiconducting silicides; processing of germano-silicide thin films; silicides and analogs for IR detection; interfaces, surfaces and epitaxy; novel structures and techniques and properties of silicide thin films.

While the effects of spontaneous ordering or composition modulation on the properties of semiconductors and optoelectronic devices have been studied with great interest over the past several years, an understanding of the physics and chemistry of these two related phenomena is still in its infancy. This book brings together researchers from around the world to address issues concerning the physics, chemistry and growth parameters for spontaneous ordering and composition modulation. Developments in the use of artificial patterning to obtain new structured materials on a microscopic scale are featured. Advances in characterization techniques are also presented. Topics include: spontaneous ordering; self-assembled structures and quantum dots; self-organized epitaxial structures; composition modulation studies and optoelectronic materials.

An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.