The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.

This book explains biosensor development fundamentals. It also initiates awareness in engineers and scientists who would like to develop and implement novel biosensors for agriculture, biomedicine, homeland security, environmental needs, and disease identification. In addition, the book introduces and lays the basic foundation for design, fabrication, testing, and implementation of next generation biosensors through hands-on learning.