In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.

The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.

Statistical Thermodynamics of Semiconductor Alloys is the consideration of thermodynamic properties and characteristics of crystalline semiconductor alloys by the methods of statistical thermodynamics. The topics presented in this book make it possible to solve such problems as calculation of a miscibility gap, a spinodal decomposition range, a short-range order, deformations of crystal structure, and description of the order-disorder transitions. Semiconductor alloys, including doped elemental semiconductors are the basic materials of solid-state electronics. Their structural stability and other characteristics are key to determining the reliability and lifetime of devices, making the investigation of stability conditions an important part of semiconductor physics, materials science, and engineering. This book is a guide to predicting and studying the thermodynamic properties and characteristics of the basic materials of solid-state electronics. Includes a complete and detailed consideration of the cluster variation method (CVM) Provides descriptions of spinodal decomposition ranges of crystalline alloys Presents a representation of thermodynamics characteristics and properties as a miscibility gap by using the different approximations of CVM Covers a unique, detailed consideration of the valence force field model with the complete collection of formulas

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. Because of their wide applications in a variety of devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This new book covers all known information about phase relations in ternary systems based on III-V semiconductors. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists.

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic

Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials