A comprehensive account of the properties, growth and applications of semiconducting transparent thin films, this book provides a single source reference for researchers in the field. It discusses the underlying physics of such films, and their commercial applications in such areas as gas sensors and temperature control coatings in the aerospace industry. It is clearly written, with sections on the different materials, different growth techniques, electrical properties, optical properties, and selected applications, for coatings, sensors, detectors and display devices. It is a valuable reference tool for the established researcher, and provides a comprehensive introcution to the subject for graduates of electrical and electronic engineering. The international team of authors, under the leadership of one of the world's authorities on the subject have written a book which has become the standard work in the field.

Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.

Copper based delafossite transparent semiconducting oxide thin films have recently gained tremendous interest in the field of optoelectronic technology, after the discovery of p-type conductivity in a transparent thin film of copper aluminium oxide (CuAlO2). Most of the well-known and widely used transparent conducting oxide thin films such as ZnO, SnO2, ITO etc. and their doped versions are n-type material, but corresponding p-type transparent conducting oxides were surprisingly missing for a long time until the fabrication of above-mentioned p-CuAlO2 thin film have been published (Nature 1997, 389, 939). This has opened up a new field in opto-electronics device technology, the so-called "Transparent Electronics", where a combination of the two types of transparent conducting oxides in the form of a p-n junction could lead to a 'functional' window, which transmits visible portion of solar radiation yet generates electricity by the absorption of UV part of it. Non-stoichiometric and doped versions of various new types of p-type transparent conducting oxides with improved optical and electrical properties have been synthesised in the last few years in this direction. Wide range of deposition techniques have been adopted to prepare the films. But fabrication of device quality films by cost-effective deposition techniques such as sputtering, chemical vapour deposition, wet-chemical dip-coating technique etc. are the need of the hour for large-scale production of these films for diverse device applications. Here the authors have discussed the fabrication and opto-electrical characterisation of p-CuAlO2+x thin films by cost-effective and scalable deposition routes such as sputtering and wet-chemical dip-coating technique. The authors have also discussed briefly some of the new developments in the field of p-type transparent conducting oxide thin film technology and an up-to-date and comprehensive description of different Cu-based p-type transparent conducting oxide thin films is presented. Also the origin of p-type conductivity in these transparent oxides has been dealt with considerable attention. Fabrication of all-transparent junctions is also discussed which is most important in the development of 'Transparent Electronics'. Field emission properties of thin films are currently of much interest due to the potential application in field emission displays (FEDs), which are considered to be strong candidate for low-power panel applications. The low-threshold field emission properties of wide-bandgap CuAlO2 thin films have been investigated for its potential applications in FED technology. The films showed considerable low turn-on field. This finding might open up a new direction in the field-emission technology, and a new group of materials (such as, different transparent conducting oxides) might become a promising candidate for low-threshold field emitter. Also, recently, the research on nanostructured materials generates great interest in the scientific community and offers tremendous opportunities in the field of science and technology. Here, the authors have also discussed in brief, the formation of nanocrystalline p-CuAlO2 films, which may open up an extremely important and interesting field of research for the fabrication of all-transparent nano-active devices. This will not only give a new dimension in the field of 'Transparent Electronics', but new avenues may open up in the nanoparticle research keeping an eye on its tremendous applications in optoelectronics technology.

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the atleast two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

The challenge for producing “invisible” electronic circuitry and opto-electronic devices is that the transistor materials must be transparent to visible light yet have good carrier mobilities. This requires a special class of materials having “contra-indicated properties” because from the band structure point of view, the combination of transparency and conductivity is contradictory. Structured to strike a balance between introductory and advanced topics, this monograph juxtaposes fundamental science and technology / application issues, and essential materials characteristics versus device architecture and practical applications. The first section is devoted to fundamental materials compositions and their properties, including transparent conducting oxides, transparent oxide semiconductors, p-type wide-band-gap semiconductors, and single-wall carbon nanotubes. The second section deals with transparent electronic devices including thin-film transistors, photovoltaic cells, integrated electronic circuits, displays, sensors, solar cells, and electro-optic devices. Describing scientific fundamentals and recent breakthroughs such as the first “invisible” transistor, Transparent Electronics: From Synthesis to Applications brings together world renowned experts from both academia, national laboratories, and industry.

Thin films can be used to fabricate optoelectronic devices. Technology is currently focusing on ternary thin film composition because of their structure, inter-band transitions and other optical properties that can be maximized. This book discusses in detail the optical characteristics of ternary thin films and further investigates the behavior of Iron Zinc Sulphide, Lead Silver Sulphide, Copper Silver Sulphide, Copper Zinc Sulphide and Cadmium Zinc Sulphide. Thin films are of fundamental importance in modern technology.