The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of todays scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing data, figures and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Doped by isovalent or heterovalent foreign impurities, II–VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths. Quaternary Alloys Based on II–VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds. The book illustrates up-to-date experimental and theoretical information about phase relations based on II–VI semiconductor systems with four components. It critically evaluates many industrially significant systems presented in two-dimensional sections for the condensed phases. The author classifies all materials according to the periodic groups of their constituent atoms and additional components in the order of their group number. Each quaternary database description contains brief information on the diagram type, possible phase transformations and physical–chemical interactions of the components, thermodynamic characteristics, and methods for equilibrium investigation and sample preparation. Most of the phase diagrams are in their original form. For those with varying published data, the text includes several versions for comparison. This book provides invaluable data for technologists and researchers involved in developing and manufacturing II–VI semiconductors at industrial and national laboratories. It is also suitable for phase relations researchers, inorganic chemists, and semiconductor physicists as well as graduate students in materials science and engineering. Check out the companion books: Ternary Alloys Based on II–VI Semiconductor Compounds and Multinary Alloys Based on II–VI Semiconductors

Semiconductor Materials presents physico-chemical, electronic, electrical, elastic, mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and ternary inorganic semiconductors and their solid solutions. It also discusses the properties of organic semiconductors. Descriptions are given of the most commonly used semiconductor devices-charge-coupled devices, field-effect transistors, unijunction transistors, thyristors, Zener and avalanche diodes, and photodiodes and lasers. The current trend of transitioning from silicon technology to gallium arsenide technology in field-effect-based electronic devices is a special feature that is also covered. More than 300 figures and 100 tables highlight discussions in the text, and more than 2,000 references guide you to further sources on specific topics. Semiconductor Materials is a relatively compact book containing vast information on semiconductor material properties. Readers can compare results of the property measurements that have been reported by different authors and critically compare the data using the reference information contained in the book. Engineers who design and improve semiconductor devices, researchers in physics and chemistry, and students of materials science and electronics will find this a valuable guide.