Applications of SEM techniques of microcharacterization have proliferated to cover every type of material and virtually every branch of science and technology. This book emphasizes the fundamental physical principles. The first section deals with the foundation of microcharacterization in electron beam instruments and the second deals with the interpretation of the information obtained in the main operating modes of a scanning electron microscope.

This book has its origins in the intensive short courses on scanning elec tron microscopy and x-ray microanalysis which have been taught annually at Lehigh University since 1972. In order to provide a textbook containing the materials presented in the original course, the lecturers collaborated to write the book Practical Scanning Electron Microscopy (PSEM), which was published by Plenum Press in 1975. The course con tinued to evolve and expand in the ensuing years, until the volume of material to be covered necessitated the development of separate intro ductory and advanced courses. In 1981 the lecturers undertook the project of rewriting the original textbook, producing the volume Scan ning Electron Microscopy and X-Ray Microanalysis (SEMXM). This vol ume contained substantial expansions of the treatment of such basic material as electron optics, image formation, energy-dispersive x-ray spectrometry, and qualitative and quantitative analysis. At the same time, a number of chapters, which had been included in the PSEM vol ume, including those on magnetic contrast and electron channeling con trast, had to be dropped for reasons of space. Moreover, these topics had naturally evolved into the basis of the advanced course. In addition, the evolution of the SEM and microanalysis fields had resulted in the devel opment of new topics, such as digital image processing, which by their nature became topics in the advanced course.

This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time.Discusses and compares infrared, Raman, and photoluminescence methodsEnables readers to choose the best method for a given problemIllustrates applications to help non-experts and industrial users, with answers to selected common problemsPresents fundamentals with examples from the semiconductor literature without excessive abstract discussionFeatures equipment lists and discussion of techniques to help establish characterization laboratories

The technological progress is closely related to the developments of various materials and tools made of those materials. Even the different ages have been defined in relation to the materials used. Some of the major attributes of the present-day age (i.e., the electronic materials’ age) are such common tools as computers and fiber-optic telecommunication systems, in which semiconductor materials provide vital components for various mic- electronic and optoelectronic devices in applications such as computing, memory storage, and communication. The field of semiconductors encompasses a variety of disciplines. This book is not intended to provide a comprehensive description of a wide range of semiconductor properties or of a continually increasing number of the semiconductor device applications. Rather, the main purpose of this book is to provide an introductory perspective on the basic principles of semiconductor materials and their applications that are described in a relatively concise format in a single volume. Thus, this book should especially be suitable as an introductory text for a single course on semiconductor materials that may be taken by both undergraduate and graduate engineering students. This book should also be useful, as a concise reference on semiconductor materials, for researchers working in a wide variety of fields in physical and engineering sciences.

During the last four decades remarkable developments have taken place in instrumentation and techniques for characterizing the microstructure and microcomposition of materials. Some of the most important of these instruments involve the use of electron beams because of the wealth of information that can be obtained from the interaction of electron beams with matter. The principal instruments include the scanning electron microscope, electron probe x-ray microanalyzer, and the analytical transmission electron microscope. The training of students to use these instruments and to apply the new techniques that are possible with them is an important function, which. has been carried out by formal classes in universities and colleges and by special summer courses such as the ones offered for the past 19 years at Lehigh University. Laboratory work, which should be an integral part of such courses, is often hindered by the lack of a suitable laboratory workbook. While laboratory workbooks for transmission electron microscopy have-been in existence for many years, the broad range of topics that must be dealt with in scanning electron microscopy and microanalysis has made it difficult for instructors to devise meaningful experiments. The present workbook provides a series of fundamental experiments to aid in "hands-on" learning of the use of the instrumentation and the techniques. It is written by a group of eminently qualified scientists and educators. The importance of hands-on learning cannot be overemphasized.

Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Microcharacterization of materials is a rapidly advancing field. Among the many electron and ion probe techniques, the cathodoluminescence mode of an electron probe instrument has reached a certain maturity, which is reflected by an increas ing number of publications in this field. The rapid rate of progress in applications of cathodoluminescence techniques in characterizing inorganic solids has been especially noticeable in recent years. The main purpose of the book is to outline the applications of cath odoluminescence techniques in the assessment of optical and electronic proper ties of inorganic solids, such as semiconductors, phosphors, ceramics, and min erals. The assessment provides, for example, information on impurity levels derived from cathodoluminescence spectroscopy, analysis of dopant concentra tions at a level that, in some cases, is several orders of magnitude lower than that attainable by x-ray microanalysis, the mapping of defects, and the determination of carrier lifetimes and the charge carrier capture cross sections of impurities. In order to make the book self-contained, some basic concepts of solid-state phys ics, as well as various cathodoluminescence techniques and the processes leading to luminescence phenomena in inorganic solids, are also described. We hope that this book will be useful to both scientists and graduate students interested in microcharacterization of inorganic solids. This book, however, was not intended as a definitive account of cathodoluminescence analysis of in organic solids. In considering the results presented here, readers should re member that many materials have properties that vary widely as a function of preparation conditions.