The importance of the effective mass (EM) is already well known since the inception of solid-state physics and this first-of-its-kind monograph solely deals with the quantum effects in EM of heavily doped (HD) nanostructures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EM in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EM in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-eight different applications in the arena of nano-science and nano-technology. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures. The book is written for post-graduate students, researchers, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience and technology and nanostructured materials in general.

This book presents scientific and technological innovations and advancements already developed or under development in academia, industry, and research communities. It includes fundamental ideas and advancement in terahertz technology covering high intensity terahertz wave generation, THz detection, different modes of THz wave generation, THz modulation system, and terahertz propagation channel modeling. It highlights methodologies for the design of terahertz components and system technologies including emerging applications. The chapter contents are based on theoretical, methodological, well-established, and validated empirical work dealing with different topics in the terahertz domain. The book covers a very broad audience ranging from basic sciences to experts and learners in engineering and technology. It would be a good reference for advanced ideas and concepts in THz technology which will best suit microwave, biomedical, and electrical and communication engineers working towards next-generation technology.

This book contains detailed descriptions and associated discussions regarding different generation, detection and signal processing techniques for the electrical and optical signals within the THz frequency spectrum (0.3–10 THz). It includes detailed reviews of some recently developed electronic and photonic devices for generating and detecting THz waves, potential materials for implementing THz passive circuits, some newly developed systems and methods associated with THz wireless communication, THz antennas and some cutting-edge techniques associated with the THz signal and image processing. The book especially focuses on the recent advancements and several research issues related to THz sources, detectors and THz signal and image processing techniques; it also discusses theoretical, experimental, established and validated empirical works on these topics. The book caters to a very wide range of readers from basic science to technological experts as well as students.

The concepts of the Electron Statistics (ES) and the ES dependent electronic properties are basic pillars in semiconductor electronics and this first-of-its-kind book deals with the said concepts in doping superlattices (SLs), quantum well, quantum wire and quantum dot SLs, effective mass SLs, SLs with graded interfaces and Fibonacci SLs under different physical conditions respectively. The influences of intense radiation and strong electric fields under said concepts have been considered together with the heavily doped SLs in this context on the basis of newly formulated the electron energy spectra in all the cases. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds 25 different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers. It is written for post graduate students of various departments of different academic organizations, engineers and professionals in the fields of solid state electronics, materials science, solid state sciences, nano-science, nanotechnology and nano materials in general.

In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.

The elastic constant (EC) is a very important mechanical property of the these materials and its significance is already well known in literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We The authors have discussed the experimental methods of determining the Einstein Relation, screening length and EC in this context. This book contains circa 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.

This book highlights the growing applications of THz technology and various modules used for their successful realization. The enormous advantages of THz devices like higher resolution, spatial directivity, high-speed communication, greater bandwidth, non-ionizing signal nature and compactness make them useful in various applications like communication, sensing, security, safety, spectroscopy, manufacturing, bio-medical, agriculture, imaging, etc. Since the THz radiation covers frequencies from 0.1THz to around 10THz and highly attenuated by atmospheric gases, they are used in short-distance applications only. The book focuses on recent advances and different research issues in terahertz technology and presents theoretical, methodological, well-established and validated empirical works dealing with the different topics.