Phase Diagrams: Materials Science and Technology, Volume III is an eight-chapter text that deals with the use of phase diagrams in electronic materials and glass technology. This volume first describes several crystal-growth techniques and the use of phase diagrams in crystals grown from high-temperature systems. This is followed by discussions on phase problems encountered in semiconductor studies with compound semiconductors and the use of phase diagrams in illustrating superconducting state and superconductivity property of materials. A chapter deals with the preparation of metastable phases by rapid quenching from the liquid (splat cooling) and the alloy constitution changes associated with their formation and properties, with a particular emphasis on the phase-diagram representation of metastable alloy phases. The discussion then shifts to metastable liquid immiscibility, occurrence, techniques of study, mechanisms of microphase separation, phase diagrams, and practical applications. This volume also examines the use of phase diagrams to obtain solubility data for high-temperature systems assisting in the prediction of dissolution behavior. The concluding chapters explore the relationships between phase diagrams and the structure of glass-forming oxide and phase studies of molten salts and their interactions with other salts and oxides. This book will be useful to all scientists, engineers, and materials science students who are investigating and developing materials, as well as to the end users of the materials.

In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.