The proceedings of this series of annual symposia represent an extensive summary of the experimental and theoretical status of high energy physics at hadron colliders. This volume discusses the latest results on top and beauty physics, QCD, electroweak physics and searches for new particles. The prospects of this field for LHC, Tevatron and Hera machines are also reported.

This volume comprises the communications presented at the ETC 11, the EUROMECH European Turbulence conference held in 2007 in Porto. The scientific committee has chosen the contributions out of the following topics: Acoustics of turbulent flows; Atmospheric turbulence; Control of turbulent flows; Geophysical and astrophysical turbulence; Instability and transition; Intermittency and scaling; Large eddy simulation and related techniques; MHD turbulence; Reacting and compressible turbulence; Transport and mixing; Turbulence in multiphase and non-Newtonian flows; Vortex dynamics and structure formation; Wall bounded flows.

Current research fields in science and technology were presented and discussed at the EKC2008, informing about the interests and directions of the scientists and engineers in EU countries and Korea. The Conference has emerged from the idea of bringing together EU and Korea to get to know each other better, especially in fields of science and technology. The focus of the conference is put on the topics: Computational Fluid Dynamics; Mechatronics and Mechanical Engineering; Information and Communications Technology; Life and Natural Sciences; Energy and Environmental Technology.

This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.