Raman scattering is now being applied with increasing success to a wide range of practical problems at the cutting edge of materials science. The purpose of this book is to make Raman spectroscopy understandable to the non-specialist and thus to bring it into the mainstream of routine materials characterization. The book is pedagogical in approach and focuses on technologically important condensed-matter systems in which the specific use of Raman spectroscopy yields new and useful information. Included are chapters on instrumentation, bulk semiconductors and alloys, heterostructures, high-Tc superconductors, catalysts, carbon-based materials, wide-gap and super-hard materials, and polymers.

Almost 30 years after the first reports on surface-enhanced Raman signals, the phenomenon of surface-enhanced Raman scattering (SERS) is now well established. SERS gained particular interest after single-molecule Raman spectroscopy had been demonstrated. This book summarizes and discusses present theoretical approaches that explain the phenomenon of SERS and reports on new and exciting experiments and applications of the fascinating spectroscopic effect.

Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: • SiC and IV-IV semiconductors, • III-GaN and nitride semiconductors, • III-V and II-VI semiconductors, • ZnO-based and GaO-based semiconducting oxides, • Graphene, ferroelectric oxides, and other emerging materials, • Wide-bandgap semiconductors of SiC, GaN, and ZnO, and • Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene. Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy. Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides. Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.

This volume treats new materials (nanotubes and quantum dots) and new techniques (synchrotron radiation scattering and cavity confined scattering). In the past five years, Raman and Brillouin scattering have taken a place among the most important research and characterization methods for carbon nanotubes. Among the novel techniques discussed in this volume are those employing synchrotron radiation as a light source.

This book presents recent results of basic research in the field of Raman scattering by optic and acoustic phonons in semiconductors, quantum wells and superlattices. It also describes various new applications for analytical materials research which have emerged alongside with scientific progress. Trends in Raman techniques and instrumentation and their implications for future developments are illustrated.