The purpose of the workshop was to review the electronics for LHC experiments and to identify areas and encourage common efforts for the development of electronics within and between the different LHC experiments and to promote collaboration in the engineering and physics communities involed in the LHC activities..

This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.

The possible upgrade of LHC or a future generation of colliders at the extreme limits of energy and luminosity will require detectors based on very advanced technological solutions to fully exploit the physics opportunities offered. Major steps must be taken to design and realize devices that are able not only to handle very high rates but also to cope with the very harsh radiation environment without suffering any performance degradation.This book reviews the present status, current limits and recent developments in detection techniques and related aspects (simulation, signal acquisition, tracking, particle identification, etc.). Novel ideas in this domain are discussed with emphasis on the directions in which improvements in proven techniques are desired.The proceedings have been selected for coverage in: OCo Index to Scientific & Technical Proceedings- (ISTP- / ISI Proceedings)OCo Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)OCo CC Proceedings OCo Engineering & Physical Sciences"

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semi-conductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Explains in detail the basics, theory, design, fabrication, and operation of vertical-cavity surface-emitting lasers. All the chapters are written by pioneers and key experts who have exclusive access to the most up-to-date innovations in the respective fields.