This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

The lifetime of a positron inside a solid is normally less than a fraction of nanosecond. This is a very short time on a human scale, but is long enough to enable the positron to visit an extended region of the material, and to sense the atomic and electronic structure of the environment. Thus, we can inject a positron in a sample to draw from it some signal giving us information on the microscopic properties of the material. This idea has been successfully developed in a number of positron-based techniques of physical analysis, with resolution in energy, momentum, or position. The complex of these techniques is what we call now positron spectroscopy of solids. The field of application of the positron spectroscopy extends from advanced problems of solid-state physics to industrial applications in the area of characterization of high-tech materials. This volume focuses the attention on the physics that can be learned from positron-based methods, but also frames those methods in a wider context including other experimental approaches. It can be considered as a textbook on positron spectroscopy of solids, the sort of book that the newcomer takes for his approach to this field, but also as a useful research tool for the expert.

In condensed matter initially fast positrons annihilate after having reached equi librium with the surroundings. The interaction of positrons with matter is governed by the laws of ordinary quantum mechanics. Field theory and antiparticle properties enter only in the annihilation process leading to the emergence of energetic photons. The monitoring of annihilation radiation by nuclear spectroscopic methods provides valuable information on the electron-positron system which can directly be related to the electronic structure of the medium. Since the positron is a positive electron its behavior in matter is especially interesting to solid-state and atomic physi cists. The small mass quarantees that the positron is really a quantum mechanical particle and completely different from any other particles and atoms. Positron physics started about 25 years ago but discoveries of new features in its interac tion with matter have maintained continuous interest and increasing activity in the field. Nowadays it is becoming part of the "stock-in-trade" of experimental physics.

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges.

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.